AT29C020-90PI

Product Overview

Category

AT29C020-90PI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 90 nanoseconds.
• Low power consumption.
• Reliable and durable.

Package

AT29C020-90PI comes in a plastic integrated circuit package.

Essence

The essence of AT29C020-90PI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 1000 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. GND

Functional Features

• Byte-wide random access.
• Fast programming and erasing operations.
• Automatic sleep mode to reduce power consumption.
• Hardware and software data protection mechanisms.
• High-speed data transfer.

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.
• Reliable and durable design ensures long-term usage.

Disadvantages

• Limited erase/write cycle endurance compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative models.
• Requires careful handling to prevent damage from electrostatic discharge.

Working Principles

AT29C020-90PI utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data by trapping electrons in a floating gate, which can be erased and reprogrammed electrically. The memory cells are organized in a grid-like structure, with each cell representing a bit of information. Accessing and modifying data is achieved through specific control signals and address lines.

Detailed Application Field Plans

AT29C020-90PI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT28C256-15PU: 256K x 8 EEPROM, 150ns access time.
2. AM29F040B-90JC: 4Mb flash memory, 90ns access time.
3. W27C512-45Z: 512K x 8 EEPROM, 450ns access time.
4. MX25L8006EM2I-12G: 8Mb flash memory, 120ns access time.
5. SST39SF010A-70-4C-PHE: 1Mb flash memory, 70ns access time.

These alternative models offer similar functionality and can be considered as substitutes for AT29C020-90PI in various applications.

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