AT49BV001-12VC

Product Overview

Category

AT49BV001-12VC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Low power consumption: Operates on low power supply voltages.
• Fast access time: Provides quick read and write operations.
• Durable: Withstands multiple read and write cycles without data loss.

Package

AT49BV001-12VC is available in a standard 32-pin plastic package.

Essence

The essence of AT49BV001-12VC lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

AT49BV001-12VC is typically packaged in reels or tubes, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Byte-wide access: Allows individual byte-level read and write operations.
• Sector erase capability: Supports erasing specific sectors of memory.
• Chip erase function: Enables erasing the entire memory chip at once.
• Hardware data protection: Provides write protection for specific memory areas.
• Automatic sleep mode: Reduces power consumption when not in use.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity meets the requirements of various applications.
• Low power consumption prolongs battery life in portable devices.
• Fast access time allows for efficient data retrieval.
• Durable design withstands frequent read and write operations.

Disadvantages

• Limited erase/write endurance compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.
• Requires careful handling to prevent electrostatic damage.

Working Principles

AT49BV001-12VC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells, where each cell can hold one or more bits of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These trapped charges represent the binary values of the stored data. To read or write data, specific voltage levels are applied to the control pins of the device, enabling the manipulation of the stored charges.

Detailed Application Field Plans

AT49BV001-12VC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49BV001-12VC include: - AT45DB011D - SST39SF010A - W25Q128JV

These alternatives provide comparable storage capacity, access times, and features, making them suitable replacements for AT49BV001-12VC in many applications.

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