AT49BV040-90VI

Product Overview

Category

AT49BV040-90VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT49BV040-90VI has a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: It operates at a maximum access time of 90 nanoseconds.
• Low power consumption: The device is designed to minimize power usage.
• Wide operating voltage range: It can operate within a voltage range of 2.7V to 3.6V.

Package

The AT49BV040-90VI is available in a standard 32-pin plastic package.

Essence

This product is an essential component for data storage in various electronic devices, including microcontrollers, embedded systems, and consumer electronics.

Packaging/Quantity

The AT49BV040-90VI is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Type: Flash
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin TSOP

Detailed Pin Configuration

The AT49BV040-90VI has the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. CE#
20. WE#
21. NC
22. DQ0
23. DQ1
24. DQ2
25. DQ3
26. DQ4
27. DQ5
28. DQ6
29. DQ7
30. VSS
31. RP#
32. BYTE#

Functional Features

• Byte-wide and word-wide operations: The AT49BV040-90VI supports both byte and word programming and reading operations.
• Sector erase capability: It allows for erasing specific sectors of the memory, enabling efficient data management.
• Automatic sleep mode: The device enters a low-power sleep mode when not in use, reducing power consumption.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited write endurance compared to other types of memory.
• Relatively higher cost per bit compared to volatile memory.

Working Principles

The AT49BV040-90VI utilizes flash memory technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. Data is stored by applying appropriate voltage levels to specific memory cells, altering their electrical state. This altered state represents the stored data, which can be read back by sensing the cell's electrical characteristics.

Detailed Application Field Plans

The AT49BV040-90VI finds application in various fields, including: 1. Microcontroller-based systems 2. Embedded systems 3. Consumer electronics 4. Automotive electronics 5. Industrial control systems

Detailed and Complete Alternative Models

1. AT49BV040B-90VI: Similar to AT49BV040-90VI, but with improved performance characteristics.
2. AT49BV080-90VI: An 8-megabit variant of the AT49BV040-90VI, offering higher storage capacity.
3. AT49BV016-90VI: A 16-megabit alternative with double the storage capacity of AT49BV040-90VI.

These alternative models provide options with varying capacities and performance levels to suit different application requirements.

In conclusion, the AT49BV040-90VI is a non-volatile memory device used for data storage in electronic systems. It offers high capacity, fast access time, and low power consumption. While it has advantages such as non-volatility and wide operating voltage range, it also has limitations like limited write endurance and relatively higher cost per bit. The product finds applications in microcontroller-based systems, embedded systems, consumer electronics, automotive electronics, and industrial control systems. Alternative models with different capacities and performance characteristics are available to cater to diverse needs.