AT49BV321T-11CI

Product Overview

Category

AT49BV321T-11CI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT49BV321T-11CI has a storage capacity of 32 megabits (4 megabytes).
• Fast access time: It offers a fast access time of 110 nanoseconds, allowing for quick data retrieval.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49BV321T-11CI is available in a compact plastic package.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic systems.

Packaging/Quantity

The AT49BV321T-11CI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 4M x 8
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 110 ns
• Erase/Program Suspend & Resume Support: Yes
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV321T-11CI features a parallel interface with the following pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. VCC: Power Supply
7. GND: Ground

Functional Features

• Erase and Program Operations: The AT49BV321T-11CI supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Suspend and Resume Support: This feature enables the suspension of ongoing erase or program operations, allowing other tasks to be performed simultaneously.
• Automatic Page Write: The device supports automatic page write, which simplifies the programming process by automatically incrementing the memory address after each byte is written.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Non-volatile memory retains data even without power

Disadvantages

• Limited endurance: Flash memory has a limited number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV321T-11CI utilizes flash memory technology to store and retrieve digital information. It employs a combination of floating-gate transistors and charge trapping to retain data even when power is removed. The memory cells are organized in a grid-like structure, with each cell capable of storing one bit of information. Data can be written to and read from these cells using specific voltage levels applied to the control pins.

Detailed Application Field Plans

The AT49BV321T-11CI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV320T-11CI: Similar to AT49BV321T-11CI but with a slightly lower storage capacity of 32 megabits (4 megabytes).
2. AT49BV322T-11CI: Similar to AT49BV321T-11CI but with a slightly higher storage capacity of 64 megabits (8 megabytes).
3. AT49BV640D-11CI: A higher-capacity alternative with 64 megabits (8 megabytes) of storage and a different pin configuration.

These alternative models offer similar functionality and characteristics, providing options for different memory requirements in electronic systems.

In conclusion, the AT49BV321T-11CI is a non-volatile memory device that offers high capacity, fast access time, and low power consumption. It finds applications in various electronic systems and provides reliable data storage. While it has limitations such as limited endurance and relatively higher cost, it remains a popular choice for many applications requiring non-volatile memory.