AT49BV512-70VC

Product Overview

Category

AT49BV512-70VC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The AT49BV512-70VC retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 512 kilobits (64 kilobytes).
• Fast access time: With a speed of 70 nanoseconds, it provides quick data retrieval.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49BV512-70VC is available in a standard 32-pin plastic package.

Essence

The essence of this product lies in its ability to store and retrieve data reliably, while offering high capacity and fast access times.

Packaging/Quantity

The AT49BV512-70VC is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 64K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. OE#
11. CE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. RY/BY#
22. NC
23. VSS
24. A8
25. A9
26. A10
27. A11
28. A12
29. A13
30. A14
31. A15
32. NC

Functional Features

• Byte-wide access: The device allows individual byte-level access, enabling efficient data manipulation.
• Sector erase capability: It supports sector-based erasure, allowing selective removal of data.
• Hardware and software protection: The AT49BV512-70VC offers various protection mechanisms to prevent unauthorized access or accidental modification of stored data.
• Automatic sleep mode: When not in use, the device enters a low-power sleep mode, conserving energy.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable data retention
• Sector-based erasure for efficient memory management

Disadvantages

• Limited endurance (10,000 erase/write cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

The AT49BV512-70VC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. Data is written by applying appropriate voltage levels to specific memory cells, while erasure is achieved by clearing entire sectors. The device employs various control signals to manage read, write, and erase operations.

Detailed Application Field Plans

The AT49BV512-70VC finds applications in a wide range of electronic devices, including: - Microcontrollers - Embedded systems - Consumer electronics (e.g., digital cameras, set-top boxes) - Automotive electronics - Industrial control systems

Its high capacity, fast access time, and non-volatile nature make it suitable for storing program code, configuration data, and other critical information in these applications.

Detailed and Complete Alternative Models

• AT49BV512-70VI: Similar to AT49BV512-70VC, but available in an industrial temperature range (-40°C to +105°C).
• AT49BV512-90VC: Offers a faster access time of 90 ns.
• AT49BV512-90VI: Industrial temperature variant with a speed of 90 ns.

These alternative models provide flexibility in terms of temperature range, access time, and specific application requirements.

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