AT49BV6416-70TI

Product Overview

Category

AT49BV6416-70TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV6416-70TI retains stored data even when power is removed.
• High capacity: It has a storage capacity of 64 megabits (8 megabytes).
• Fast access time: The device offers a fast access time of 70 nanoseconds.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.

Package

The AT49BV6416-70TI is available in a surface-mount TSOP package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49BV6416-70TI is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Flash
• Organization: 8M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Suspend & Resume Support: Yes
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV6416-70TI has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. A16
18. A17
19. A18
20. A19
21. A20
22. A21
23. A22
24. A23
25. BYTE#
26. WE#
27. CE#
28. OE#
29. I/O0
30. I/O1
31. I/O2
32. I/O3
33. I/O4
34. I/O5
35. I/O6
36. I/O7
37. VCC
38. GND
39. RP#
40. RY/BY#
41. RESET#
42. WP#
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Fast Read and Write Operations: The AT49BV6416-70TI offers high-speed read and write operations, allowing for efficient data access.
• Sector Erase Capability: It supports sector erase operations, enabling selective erasure of specific memory sectors.
• Low Power Consumption: The device operates on low power, making it suitable for power-constrained applications.
• Suspend & Resume Support: It allows suspension and resumption of erase or program operations, providing flexibility in programming sequences.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity meets the requirements of various applications.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV6416-70TI utilizes flash memory technology to store data. It consists of a grid of memory cells, where each cell can store multiple bits of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These trapped charges represent the binary values of the stored data.

During read operations, the stored charges are measured to determine the data value. Write and erase operations involve applying specific voltage levels to modify the charge state of the memory cells.

Detailed Application Field Plans

The AT49BV6416-70TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high capacity, fast access time, and non-volatile nature make it suitable for storing firmware, program code, configuration data, and other critical information in these applications.

Detailed and Complete Alternative Models

1. AT49BV6416T-70TU: Similar to AT49BV6416-70TI, but available in a different package (TSOP-II).
2. AT49BV6416T-70CI: Similar to AT49BV