AT49F001N-70JC

Product Overview

Category

AT49F001N-70JC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Optimized for energy efficiency.
• Durable: Withstands harsh environmental conditions.

Package

AT49F001N-70JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT49F001N-70JC lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 10,000 minimum

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. NC
29. NC
30. A8
31. A9
32. A11

Functional Features

• Easy integration: Compatible with standard microcontrollers and digital systems.
• High-speed operation: Enables fast data access and transfer.
• Flexible write protection: Supports hardware and software-based protection mechanisms.
• Sector erase capability: Allows selective erasure of memory sectors.
• Data retention: Ensures long-term storage of information without degradation.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data persistence.
• High storage capacity for various applications.
• Fast access time enhances system performance.
• Low power consumption for energy-efficient operation.
• Durable design withstands challenging environments.

Disadvantages

• Limited erase/program cycles may restrict certain applications.
• Relatively higher cost compared to other memory technologies.
• Larger physical footprint due to the package size.

Working Principles

AT49F001N-70JC utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data in floating gate transistors, allowing for non-volatile storage. The device uses a combination of electrical signals and control lines to perform read, write, and erase operations.

Detailed Application Field Plans

AT49F001N-70JC finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-90JC
2. AT49F004N-12JC
3. AT49F008N-15JC
4. AT49F016N-25JC

These alternative models offer similar functionality and characteristics, but with varying storage capacities and access times.

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