AT49F001T-12TC

Product Overview

Category

AT49F001T-12TC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Operates at a speed of 120 nanoseconds.
• Low power consumption: Designed to minimize energy usage.
• Reliable: Offers high endurance and data retention.

Package

AT49F001T-12TC is available in a Thin Small Outline Package (TSOP), which ensures compactness and ease of integration into electronic circuits.

Essence

The essence of AT49F001T-12TC lies in its ability to provide reliable, non-volatile memory storage for various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49F001T-12TC chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001T-12TC chip has a total of 32 pins, each serving a specific function. The pin configuration is as follows:

1. A16
2. A15
3. A14
4. A12
5. A7
6. A6
7. A5
8. A4
9. A3
10. A2
11. A1
12. A0
13. VCC
14. A8
15. A9
16. A11
17. A13
18. CE#
19. OE#
20. WE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. RESET#
30. GND
31. NC
32. WP#

Functional Features

• Byte-wide access: Allows individual bytes to be read or written independently.
• Sector erase capability: Enables selective erasure of specific memory sectors.
• Hardware and software protection: Provides mechanisms to protect data from accidental modification.
• Automatic sleep mode: Reduces power consumption when the device is idle.
• Fast programming time: Facilitates quick data storage operations.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity accommodates a wide range of applications.
• Fast access time allows for efficient data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Reliable endurance and data retention characteristics ensure long-term usability.

Disadvantages

• Limited erase/write cycle endurance compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to some alternative memory solutions.
• Susceptible to electromagnetic interference (EMI) due to its electronic nature.

Working Principles

AT49F001T-12TC utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. The stored charge determines the logic state of each memory cell, allowing for data storage and retrieval.

Detailed Application Field Plans

AT49F001T-12TC finds applications in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics

Its high storage capacity, fast access time, and non-volatile nature make it suitable for storing firmware, configuration data, and other critical information in these applications.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49F001T-12TC include: - AT49BV001T: A compatible variant with a wider operating voltage range. - AM29F010B: A similar flash EEPROM device from a different manufacturer. - W27C010: An alternative non-volatile memory chip with comparable specifications.

These alternative models can be considered based on specific application requirements and availability in the market.

In conclusion, AT49F001T-12TC is a reliable non-volatile memory device with high storage capacity, fast access time, and low power consumption. Its functional features and