AT49LV002N-12TC

Product Overview

Category

AT49LV002N-12TC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49LV002N-12TC has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It operates at a speed of 120 nanoseconds, allowing for quick data retrieval.
• Low power consumption: The device is designed to minimize power usage, making it suitable for battery-powered applications.

Package

The AT49LV002N-12TC is available in a Thin Small Outline Package (TSOP) with 32 pins.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49LV002N-12TC is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Supply voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Input/output voltage levels: TTL-compatible
• Erase/program cycles: 10,000 minimum
• Data retention: 20 years minimum

Detailed Pin Configuration

1. A0 - Address input
2. A1 - Address input
3. A2 - Address input
4. A3 - Address input
5. A4 - Address input
6. A5 - Address input
7. A6 - Address input
8. A7 - Address input
9. A8 - Address input
10. A9 - Address input
11. A10 - Address input
12. A11 - Address input
13. A12 - Address input
14. A13 - Address input
15. A14 - Address input
16. A15 - Address input
17. /OE - Output enable
18. /CE - Chip enable
19. /WE - Write enable
20. DQ0 - Data input/output
21. DQ1 - Data input/output
22. DQ2 - Data input/output
23. DQ3 - Data input/output
24. DQ4 - Data input/output
25. DQ5 - Data input/output
26. DQ6 - Data input/output
27. DQ7 - Data input/output
28. VCC - Power supply
29. GND - Ground
30. NC - No connection
31. /RP - Ready/Busy output
32. /WP - Write protect

Functional Features

• Byte-wide organization: The AT49LV002N-12TC allows for byte-level access, providing flexibility in data manipulation.
• Sector erase capability: It supports sector-based erasure, allowing specific portions of the memory to be erased without affecting others.
• Automatic sleep mode: The device enters a low-power sleep mode when not in use, conserving energy.
• Hardware and software write protection: The AT49LV002N-12TC offers multiple levels of write protection to prevent accidental modification or unauthorized access.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity suitable for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited erase/program cycles may restrict frequent data modifications.
• Relatively higher cost compared to volatile memory alternatives.
• Larger physical footprint compared to integrated circuits with similar capacity.

Working Principles

The AT49LV002N-12TC utilizes flash memory technology to store data. It consists of a grid of memory cells, each capable of holding a charge to represent a binary value (0 or 1). The state of these cells is controlled by applying appropriate voltages to the address and control pins. Data can be written by programming the cells with the desired charge level, and read by sensing the voltage levels stored in the cells.

Detailed Application Field Plans

The AT49LV002N-12TC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV002NT-12TC: Similar to AT49LV002N-12TC, but with a wider operating temperature range (-55°C to +125°C).
2. AT49LV004N-12TC: Double the storage capacity of AT49LV002N-12TC, with 4 megabits (512 kilobytes) of memory. 3