SST39VF200A-70-4C-M1QE

Product Overview

Category

The SST39VF200A-70-4C-M1QE belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Low power consumption
• Wide operating voltage range
• Durable and reliable

Package

The SST39VF200A-70-4C-M1QE comes in a compact surface-mount package, making it suitable for integration into small-sized electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The SST39VF200A-70-4C-M1QE is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Operating Voltage: 2.7V - 3.6V
• Capacity: 2 Megabits (256 Kilobytes)
• Access Time: 70 nanoseconds
• Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 256K x 8 bits
• Erase/Program Suspend & Resume Support
• Sector Erase Architecture:
  • Uniform 4 KByte sectors
  • Uniform 32 KByte overlay blocks
  • Uniform 64 KByte overlay blocks

Detailed Pin Configuration

The SST39VF200A-70-4C-M1QE has the following pin configuration:

1. VCC - Power supply voltage
2. A0-A17 - Address inputs
3. DQ0-DQ7 - Data input/output
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Reset/Protection
8. WP# - Write protect
9. RY/BY# - Ready/busy status output

Functional Features

• High-speed data transfer
• Easy integration into existing systems
• Reliable and durable storage solution
• Support for various read and write operations
• Flexible erase options for efficient memory management

Advantages and Disadvantages

Advantages

• Fast read and write operations
• Low power consumption
• Wide operating voltage range allows compatibility with different systems
• Durable and reliable, ensuring data integrity
• Flexible erase options for efficient memory management

Disadvantages

• Limited capacity compared to higher-end flash memory devices
• Parallel interface may not be suitable for all applications
• Higher cost compared to some other memory technologies

Working Principles

The SST39VF200A-70-4C-M1QE utilizes a floating-gate transistor technology to store digital information. It employs a combination of electrical charges to represent binary data (0s and 1s). The stored information can be accessed and modified through specific read and write operations.

Detailed Application Field Plans

The SST39VF200A-70-4C-M1QE finds applications in various fields, including but not limited to: - Computer systems - Mobile devices - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

1. SST39VF400A-70-4C-M1QE: Similar to the SST39VF200A-70-4C-M1QE but with double the capacity (4 Megabits).
2. SST39VF800A-70-4C-M1QE: A higher-capacity alternative with 8 Megabits of storage.
3. SST39VF1601-70-4C-M1QE: Offers 16 Megabits of storage capacity.

These alternative models provide options for different storage requirements and system configurations.

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