SST39VF401C-70-4C-B3KE-T

Product Overview

Category

The SST39VF401C-70-4C-B3KE-T belongs to the category of Flash Memory ICs.

Use

This product is commonly used for storing and retrieving digital information in various electronic devices such as computers, smartphones, tablets, and other consumer electronics.

Characteristics

• Non-volatile: The SST39VF401C-70-4C-B3KE-T retains data even when power is turned off.
• High storage capacity: This flash memory IC has a capacity of 4 megabits (512 kilobytes).
• Fast read and write speeds: It operates at a maximum speed of 70 nanoseconds for both reading and writing data.
• Low power consumption: The SST39VF401C-70-4C-B3KE-T is designed to minimize power usage, making it suitable for battery-powered devices.
• Wide operating voltage range: It can operate within a voltage range of 2.7V to 3.6V.

Package and Quantity

The SST39VF401C-70-4C-B3KE-T is available in a surface-mount TSOP package. It is typically sold in reels containing a specific quantity, usually 250 or 500 units per reel.

Specifications

• Manufacturer: Microchip Technology Inc.
• Part Number: SST39VF401C-70-4C-B3KE-T
• Memory Type: Flash
• Memory Size: 4 Megabits (512 Kilobytes)
• Access Time: 70 Nanoseconds
• Supply Voltage Range: 2.7V to 3.6V
• Package Type: TSOP
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The SST39VF401C-70-4C-B3KE-T has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A16
3. A15
4. A14
5. A13
6. A12
7. A11
8. A10
9. A9
10. A8
11. A7
12. A6
13. A5
14. A4
15. A3
16. A2
17. A1
18. A0
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE#
28. CE#
29. OE#
30. RESET#
31. BYTE#
32. VSS
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Sector Erase Capability: The SST39VF401C-70-4C-B3KE-T supports sector erase operations, allowing specific sectors of the memory to be erased without affecting other data.
• Page Program Operation: It enables fast and efficient programming of data in individual memory pages.
• Automatic Write Timing: The device automatically manages the write timing, simplifying the programming process.
• Software Data Protection: The SST39VF401C-70-4C-B3KE-T provides software-controlled protection mechanisms to prevent accidental erasure or modification of stored data.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity suitable for various applications.
• Fast read and write speeds enhance overall system performance.
• Low power consumption extends battery life in portable devices.
• Wide operating voltage range allows compatibility with different power sources.

Disadvantages

• Limited storage capacity compared to higher-capacity flash memory ICs.
• Relatively slower access times compared to some newer memory technologies.

Working Principles

The SST39VF401C-70-4C-B3KE-T utilizes a floating-gate transistor structure to store digital information. It employs a combination of electrical charges to represent binary data (0s and 1s). The memory cells can be programmed or erased by applying specific voltage levels to the control pins.

During programming, the device applies high voltages to the appropriate pins to trap electrons in the floating gate, altering the cell's threshold voltage. Erasing is achieved by removing the trapped electrons from the floating gate, resetting the cell to its initial state.

Detailed Application Field Plans

The SST39VF401C-70-4C-B3KE-T finds application in various electronic systems, including but not limited to: