SST39VF512-70-4I-NHE-T

Product Overview

Category

The SST39VF512-70-4I-NHE-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The SST39VF512-70-4I-NHE-T retains stored data even when power is removed.
• High capacity: It has a storage capacity of 512 megabits (64 megabytes).
• Fast operation: The device operates at a speed of 70 nanoseconds.
• Industrial-grade: Designed to withstand harsh environmental conditions.
• Low power consumption: The SST39VF512-70-4I-NHE-T is energy-efficient.

Package

The SST39VF512-70-4I-NHE-T is available in a compact surface-mount package.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The SST39VF512-70-4I-NHE-T is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Flash
• Organization: 512 Mbit (64 Mbyte)
• Access Time: 70 ns
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP
• Pin Count: 48

Detailed Pin Configuration

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Reset/Protection
8. WP# - Write protect
9. RY/BY# - Ready/busy status
10. VSS - Ground

Functional Features

• High-speed read and write operations
• Sector erase and byte programming capabilities
• Automatic sleep mode for power saving
• Hardware and software protection mechanisms
• Erase and program suspend/resume functions
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast operation speed
• Industrial-grade durability
• Low power consumption
• Reliable data retention

Disadvantages

• Limited compatibility with certain devices
• Higher cost compared to other memory options

Working Principles

The SST39VF512-70-4I-NHE-T utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These trapped charges represent binary information that can be read or modified as needed. The device uses a combination of address inputs, control signals, and data lines to perform read, write, and erase operations.

Detailed Application Field Plans

The SST39VF512-70-4I-NHE-T is widely used in various applications, including: 1. Computer systems 2. Mobile devices 3. Automotive electronics 4. Industrial control systems 5. Medical equipment 6. Communication devices

Detailed and Complete Alternative Models

1. SST39VF010-70-4C-WH: 1 Mbit (128 Kbyte) flash memory with similar characteristics.
2. SST39SF040-70-4C-NH: 4 Mbit (512 Kbyte) flash memory with comparable features.
3. SST39VF800A-70-4C-EKE: 8 Mbit (1 Mbyte) flash memory offering higher capacity.

These alternative models provide different storage capacities to suit various application requirements while maintaining similar performance characteristics.

In conclusion, the SST39VF512-70-4I-NHE-T is a high-capacity non-volatile memory device that offers fast operation, durability, and low power consumption. It finds applications in diverse fields and has alternative models with varying capacities to cater to different needs.