SST39VF6402B-70-4I-B1KE

Product Overview

Category

The SST39VF6402B-70-4I-B1KE belongs to the category of Flash Memory.

Use

This product is commonly used for data storage and retrieval in various electronic devices, such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile memory: The SST39VF6402B-70-4I-B1KE retains stored data even when power is removed.
• High capacity: With a storage capacity of 64 megabits (8 megabytes), it can accommodate a large amount of data.
• Fast access time: The product offers a high-speed read and write performance, allowing for quick data retrieval and storage.
• Low power consumption: The SST39VF6402B-70-4I-B1KE is designed to operate efficiently with minimal power requirements.
• Durable and reliable: It has a robust design that ensures data integrity and longevity.

Package

The SST39VF6402B-70-4I-B1KE is available in a compact and industry-standard package, making it compatible with various circuit board designs.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory for electronic devices, enabling efficient data storage and retrieval.

Packaging/Quantity

The SST39VF6402B-70-4I-B1KE is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities suitable for both individual and bulk purchases.

Specifications

• Manufacturer: Microchip Technology Inc.
• Part Number: SST39VF6402B-70-4I-B1KE
• Memory Type: Flash
• Capacity: 64 Megabits (8 Megabytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Package Type: 48-pin TSOP
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The SST39VF6402B-70-4I-B1KE has a 48-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. A16
18. A17
19. A18
20. A19
21. A20
22. A21
23. A22
24. A23
25. VSS (Ground)
26. DQ0
27. DQ1
28. DQ2
29. DQ3
30. DQ4
31. DQ5
32. DQ6
33. DQ7
34. WE# (Write Enable)
35. CE# (Chip Enable)
36. OE# (Output Enable)
37. RP# (Reset/Protection)
38. BYTE#
39. VCC (Power Supply)
40. NC (No Connection)
41. NC (No Connection)
42. NC (No Connection)
43. NC (No Connection)
44. NC (No Connection)
45. NC (No Connection)
46. NC (No Connection)
47. NC (No Connection)
48. NC (No Connection)

Functional Features

• High-speed read and write operations
• Sector erase and block erase functions
• Automatic program and erase algorithms
• Hardware and software protection mechanisms
• Low power consumption in standby mode
• Data retention for extended periods

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Durable and reliable
• Low power consumption
• Suitable for various electronic devices

Disadvantages

• Limited write endurance
• Higher cost compared to other memory technologies

Working Principles

The SST39VF6402B-70-4I-B1KE utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information, which can be read or modified through specific electrical operations.

Detailed Application Field Plans

The SST39VF6402B-70-4I-B1KE finds applications in a wide range of electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Gaming consoles - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

• SST39VF