SST39WF1601-90-4I-MBQE-T

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-speed read/write operations, low power consumption
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Model: SST39WF1601-90-4I-MBQE-T
• Memory Size: 16 Megabits (2 Megabytes)
• Organization: 2M x 8-bit / 1M x 16-bit
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns
• Erase/Program Suspend & Resume Support: Yes
• Sector Architecture: Uniform 4 KByte sectors with 32 KByte overlay blocks
• Data Retention: Minimum 20 years

Detailed Pin Configuration

The SST39WF1601-90-4I-MBQE-T has a 48-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. CE#
11. OE#
12. WE#
13. BYTE#
14. NC
15. DQ0
16. DQ1
17. DQ2
18. DQ3
19. DQ4
20. DQ5
21. DQ6
22. DQ7
23. VSS
24. NC
25. NC
26. WP#
27. RESET#
28. RP#
29. RY/BY#
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed read and write operations for efficient data transfer
• Low power consumption for extended battery life in portable devices
• Erase and program suspend & resume support for flexible operation
• Uniform sector architecture for easy data management
• Reliable data retention for long-term storage

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Low power consumption extends battery life in electronic devices
• Suspend & resume support enables flexible programming options
• Uniform sector architecture simplifies data management

Disadvantages

• Limited memory size (16 Megabits) compared to higher capacity flash memory options
• Parallel interface may not be suitable for all applications requiring serial communication

Working Principles

The SST39WF1601-90-4I-MBQE-T operates based on the principles of flash memory technology. It utilizes floating-gate transistors to store and retrieve digital data. The memory cells are organized into sectors, which can be individually erased or programmed. The parallel interface allows for high-speed data transfer between the device and the host system.

Detailed Application Field Plans

The SST39WF1601-90-4I-MBQE-T is commonly used in various electronic devices that require non-volatile data storage. Some application fields include: - Consumer electronics (e.g., digital cameras, portable media players) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Communication devices (e.g., routers, modems)

Detailed and Complete Alternative Models

• SST39VF1601-90-4I-MBQE-T: Similar to SST39WF1601-90-4I-MBQE-T but with a different erase algorithm
• SST39WF3201-90-4I-MBQE-T: Higher capacity flash memory with 32 Megabits (4 Megabytes) of storage
• SST39WF800A-70-4C-B3KE-T: Lower capacity flash memory with 8 Megabits (1 Megabyte) of storage

These alternative models provide options with varying capacities and features to suit different application requirements.

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