SST39WF1602-90-4I-B3KE

Product Overview

Category

The SST39WF1602-90-4I-B3KE belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The SST39WF1602-90-4I-B3KE retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 16 megabits (2 megabytes).
• Fast access time: The device provides quick access to stored data with a read access time of 90 nanoseconds.
• Low power consumption: The SST39WF1602-90-4I-B3KE operates efficiently with low power requirements.
• Wide operating voltage range: It can function within a voltage range of 2.7V to 3.6V.

Package

The SST39WF1602-90-4I-B3KE is available in a compact and durable package that ensures protection against external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The SST39WF1602-90-4I-B3KE is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities of 100 or more.

Specifications

• Memory Type: Flash
• Memory Size: 16 Megabits (2 Megabytes)
• Access Time: 90 Nanoseconds
• Operating Voltage Range: 2.7V - 3.6V
• Package Type: BGA
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The SST39WF1602-90-4I-B3KE has a pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. CE#: Chip enable
6. OE#: Output enable
7. WE#: Write enable
8. RP#/BYTE#: Reset/Byte# (optional)
9. WP#/ACC: Write protect/Acceleration (optional)

Functional Features

• High-speed data transfer: The SST39WF1602-90-4I-B3KE allows for fast read and write operations, enabling efficient data transfer.
• Sector erase capability: It supports sector-based erasure, allowing specific portions of the memory to be erased without affecting other data.
• Write protection: The device includes write protection features to prevent accidental modification or deletion of stored data.
• Reliable data retention: The SST39WF1602-90-4I-B3KE ensures long-term data retention, making it suitable for critical applications.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption for energy-efficient operation.
• Wide operating voltage range provides compatibility with different systems.

Disadvantages

• Limited rewrite cycles: Flash memory has a finite number of erase/write cycles before degradation may occur.
• Relatively higher cost compared to other types of memory.

Working Principles

The SST39WF1602-90-4I-B3KE utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and electrically isolated gates to trap and release electrons, representing binary data (0s and 1s). The stored data can be accessed by sending appropriate commands to the memory device.

Detailed Application Field Plans

The SST39WF1602-90-4I-B3KE finds applications in various fields, including: 1. Consumer electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage. 2. Automotive systems: Employed in infotainment systems, navigation devices, and engine control units for reliable data storage. 3. Industrial automation: Utilized in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and robotics for storing critical program code and data. 4. Medical devices: Integrated into medical equipment such as patient monitors, imaging systems, and diagnostic devices for data storage and firmware updates.

Detailed and Complete Alternative Models

1. SST39VF1601-70-4C-EKE: Similar to the SST39WF1602-90-4I-B3KE but with a lower access time of 70 nanoseconds.
2. AT25SF161-SHD-T: A comparable flash memory device with a capacity of 16 megab