MT29E768G08EEHBBJ4-3:B

Basic Information Overview

• Category: Memory Module
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Compact size
• Package: Integrated circuit module
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single unit

Specifications

• Model: MT29E768G08EEHBBJ4-3:B
• Capacity: 768 GB
• Interface: SATA III
• Form Factor: 2.5-inch
• Speed: Up to 550 MB/s (Read), up to 520 MB/s (Write)
• NAND Flash Type: 3D TLC
• Operating Voltage: 5V ± 10%
• Operating Temperature: 0°C to 70°C
• Dimensions: 100.20mm x 69.85mm x 7.00mm
• Weight: 45g

Detailed Pin Configuration

The detailed pin configuration for the MT29E768G08EEHBBJ4-3:B memory module is as follows:

| Pin Number | Function | |------------|----------| | 1 | VCC | | 2 | GND | | 3 | DQ0 | | 4 | DQ1 | | 5 | DQ2 | | 6 | DQ3 | | 7 | DQ4 | | 8 | DQ5 | | 9 | DQ6 | | 10 | DQ7 | | ... | ... |

Functional Features

• High-speed data transfer for quick access to stored information
• Reliable and durable non-volatile memory technology
• Low power consumption for energy efficiency
• Advanced error correction and data protection mechanisms
• Compatibility with various operating systems and devices

Advantages

• Large storage capacity allows for storing vast amounts of data
• Fast data transfer rate enhances overall system performance
• Compact size enables easy integration into electronic devices
• Reliable and durable memory technology ensures data integrity
• Low power consumption prolongs battery life in portable devices

Disadvantages

• Relatively higher cost compared to traditional hard disk drives
• Limited lifespan due to finite write cycles of NAND flash memory
• Susceptible to data loss in case of physical damage or electrical failure

Working Principles

The MT29E768G08EEHBBJ4-3:B memory module utilizes NAND flash memory technology to store data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the charge level on its floating gate.

During operation, data is written to and read from the memory cells using electrical signals. The controller manages these operations, ensuring data integrity and implementing error correction techniques.

Detailed Application Field Plans

The MT29E768G08EEHBBJ4-3:B memory module finds applications in various electronic devices, including: 1. Personal computers and laptops 2. Servers and data centers 3. Gaming consoles 4. Solid-state drives (SSDs) 5. Embedded systems and IoT devices

Detailed and Complete Alternative Models

1. MT29E768G08EBBBD4-3:C

   • Capacity: 768 GB
   • Interface: PCIe Gen3 x4
   • Form Factor: M.2 2280
   • Speed: Up to 3500 MB/s (Read), up to 3000 MB/s (Write)

2. MT29E768G08EBBBD4-3:D

   • Capacity: 768 GB
   • Interface: SATA III
   • Form Factor: 2.5-inch
   • Speed: Up to 560 MB/s (Read), up to 530 MB/s (Write)

3. MT29E768G08EBBBD4-3:E

   • Capacity: 768 GB
   • Interface: UFS 3.1
   • Form Factor: BGA
   • Speed: Up to 2100 MB/s (Read), up to 1800 MB/s (Write)

These alternative models offer similar storage capacities and varying interfaces/form factors to cater to different device requirements.

In conclusion, the MT29E768G08EEHBBJ4-3:B memory module is a high-capacity, fast, and reliable storage solution used in various electronic devices. Its advanced features and compact design make it suitable for a wide range of applications.