MT29F1HT08EMHBBJ4-3R:B

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip in a package

Specifications

• Model: MT29F1HT08EMHBBJ4-3R:B
• Capacity: 1 Terabit (128 Gigabytes)
• Interface: NAND Flash
• Voltage: 3.3V
• Speed: Up to 200 Megabytes per second (Read), up to 100 Megabytes per second (Write)

Detailed Pin Configuration

The MT29F1HT08EMHBBJ4-3R:B has a total of 48 pins arranged as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | A0-A19 | Address inputs | | 4 | CE# | Chip enable input | | 5 | CLE | Command latch enable input | | 6 | ALE | Address latch enable input | | ... | ... | ... |

Functional Features

• High-speed data transfer
• Reliable data retention
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Block erase and program operations
• Bad block management

Advantages

• Large storage capacity
• Fast read/write speeds
• Low power consumption
• Compact size
• High reliability and durability

Disadvantages

• Limited write endurance
• Higher cost compared to traditional hard drives

Working Principles

The MT29F1HT08EMHBBJ4-3R:B is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read by applying voltages to specific pins, which control the flow of electrons within the memory cells.

Detailed Application Field Plans

The MT29F1HT08EMHBBJ4-3R:B is commonly used in various electronic devices, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP-IT: 1 Gigabit NAND Flash Memory
• MT29F2G08ABAEAWP-IT: 2 Gigabit NAND Flash Memory
• MT29F4G08ABADAWP-IT: 4 Gigabit NAND Flash Memory
• MT29F8G08ABACAWP-IT: 8 Gigabit NAND Flash Memory
• MT29F16G08CBACAWP-IT: 16 Gigabit NAND Flash Memory

These alternative models offer different capacities to suit various application requirements.

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