MT29F256G08AKCBBH7-6IT:B

Product Overview

Category

The MT29F256G08AKCBBH7-6IT:B belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08AKCBBH7-6IT:B offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08AKCBBH7-6IT:B is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F256G08AKCBBH7-6IT:B is typically packaged in a surface-mount technology (SMT) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 256 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

The MT29F256G08AKCBBH7-6IT:B has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. VCCQ
3. GND
4. RE#
5. WE#
6. CLE
7. ALE
8. CE#
9. R/B#
10. DQS
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Program Operation: The MT29F256G08AKCBBH7-6IT:B supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Read and Write Operations: The product allows for fast and reliable read and write operations, ensuring efficient data access and storage.
• Error Correction Code (ECC): ECC functionality is integrated into the NAND flash memory, enhancing data reliability by detecting and correcting errors.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08AKCBBH7-6IT:B utilizes NAND flash memory technology. It consists of a grid of memory cells, where each cell stores multiple bits of data using floating-gate transistors. The data is written by applying appropriate voltages to the control gates and storing charge in the floating gates. Reading the stored data involves sensing the voltage levels in the memory cells. The product employs various algorithms and error correction techniques to ensure reliable data storage and retrieval.

Detailed Application Field Plans

The MT29F256G08AKCBBH7-6IT:B finds application in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. MT29F256