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MT29F64G08CBEDBJ4-12M:D TR

MT29F64G08CBEDBJ4-12M:D TR

Product Overview

Category

MT29F64G08CBEDBJ4-12M:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F64G08CBEDBJ4-12M:D TR offers a storage capacity of 64 gigabytes (GB), allowing users to store large amounts of data.
  • Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
  • Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
  • Low power consumption: The MT29F64G08CBEDBJ4-12M:D TR is energy-efficient, consuming minimal power during operation.
  • Compact package: It comes in a compact form factor, allowing for easy integration into various electronic devices.
  • Robust packaging: The product is packaged in a durable casing that protects it from physical damage and environmental factors.

Specifications

  • Model: MT29F64G08CBEDBJ4-12M:D TR
  • Storage Capacity: 64 GB
  • Interface: NAND Flash
  • Operating Voltage: 3.3V
  • Data Transfer Rate: Up to 400 megabits per second (Mbps)
  • Package Type: Ball Grid Array (BGA)
  • Temperature Range: -40°C to +85°C

Pin Configuration

The detailed pin configuration of MT29F64G08CBEDBJ4-12M:D TR can be found in the product datasheet.

Functional Features

  • Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
  • Wear Leveling: The product employs wear leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the device.
  • Bad Block Management: It includes a bad block management system that identifies and isolates defective memory blocks, preventing data corruption.

Advantages

  • High storage capacity allows for ample data storage.
  • Fast data transfer rate ensures efficient data processing.
  • Reliable performance suitable for demanding applications.
  • Low power consumption contributes to energy efficiency.
  • Compact package enables easy integration into various devices.
  • Robust packaging protects the product from physical damage.

Disadvantages

  • Limited compatibility with certain older devices that do not support NAND flash memory technology.
  • Relatively higher cost compared to other types of memory storage.

Working Principles

The MT29F64G08CBEDBJ4-12M:D TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells that store data in a non-volatile manner. These cells are organized into pages and blocks, allowing for efficient read and write operations.

Application Field Plans

The MT29F64G08CBEDBJ4-12M:D TR is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Embedded systems

Alternative Models

  • MT29F64G08CBEDBGD4-12M:D TR
  • MT29F64G08CBEDBH4-12M:D TR
  • MT29F64G08CBEDBI4-12M:D TR

These alternative models offer similar specifications and functionality to the MT29F64G08CBEDBJ4-12M:D TR.

In conclusion, the MT29F64G08CBEDBJ4-12M:D TR is a high-capacity NAND flash memory product that offers fast data transfer rates, reliable performance, and low power consumption. It finds applications in various electronic devices and is packaged in a compact and robust form factor. While it may have limited compatibility and a relatively higher cost, its advantages outweigh these disadvantages, making it a popular choice for data storage needs.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29F64G08CBEDBJ4-12M:D TR en soluciones técnicas

1. What is the MT29F64G08CBEDBJ4-12M:D TR?

The MT29F64G08CBEDBJ4-12M:D TR is a specific model of NAND flash memory chip manufactured by Micron Technology. It has a capacity of 64 gigabits (8 gigabytes) and operates at a speed of 12 megatransfers per second.

2. What are some common applications for the MT29F64G08CBEDBJ4-12M:D TR?

The MT29F64G08CBEDBJ4-12M:D TR is commonly used in various technical solutions, including but not limited to embedded systems, solid-state drives (SSDs), industrial automation, automotive electronics, and consumer electronics.

3. What is the voltage requirement for the MT29F64G08CBEDBJ4-12M:D TR?

The MT29F64G08CBEDBJ4-12M:D TR operates at a voltage range of 2.7V to 3.6V.

4. What is the interface used by the MT29F64G08CBEDBJ4-12M:D TR?

The MT29F64G08CBEDBJ4-12M:D TR uses a standard asynchronous NAND interface.

5. What is the endurance rating of the MT29F64G08CBEDBJ4-12M:D TR?

The MT29F64G08CBEDBJ4-12M:D TR has an endurance rating of up to 100,000 program/erase cycles.

6. What is the operating temperature range for the MT29F64G08CBEDBJ4-12M:D TR?

The MT29F64G08CBEDBJ4-12M:D TR can operate within a temperature range of -40°C to +85°C.

7. Does the MT29F64G08CBEDBJ4-12M:D TR support hardware data protection features?

Yes, the MT29F64G08CBEDBJ4-12M:D TR supports various hardware data protection features such as block locking, password protection, and write protection.

8. What is the page size of the MT29F64G08CBEDBJ4-12M:D TR?

The MT29F64G08CBEDBJ4-12M:D TR has a page size of 2,112 bytes (2KB).

9. Can the MT29F64G08CBEDBJ4-12M:D TR be used as a boot device?

Yes, the MT29F64G08CBEDBJ4-12M:D TR can be used as a boot device in many applications.

10. Is the MT29F64G08CBEDBJ4-12M:D TR compatible with other NAND flash memory chips?

Yes, the MT29F64G08CBEDBJ4-12M:D TR is compatible with other NAND flash memory chips that use the same interface and voltage requirements. However, compatibility should always be verified with the specific system requirements.