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MT29F768G08EECBBJ4-37:B
Basic Information Overview
- Category: Memory Device
- Use: Data storage and retrieval
- Characteristics:
- Non-volatile
- High capacity
- Fast read/write speeds
- Package: BGA (Ball Grid Array)
- Essence: Flash memory chip
- Packaging/Quantity: Single unit
Specifications
- Model: MT29F768G08EECBBJ4-37:B
- Capacity: 768 gigabits (96 gigabytes)
- Interface: NAND Flash
- Voltage: 3.3V
- Operating Temperature: -40°C to +85°C
- Speed: Up to 400 megabytes per second (read), up to 200 megabytes per second (write)
Detailed Pin Configuration
The MT29F768G08EECBBJ4-37:B has a total of 48 pins arranged in a specific configuration. The pinout diagram is as follows:
Pin 1: VCC
Pin 2: ALE
Pin 3: CLE
...
Pin 48: GND
Functional Features
- High-speed data transfer
- Reliable data retention
- Error correction capabilities
- Wear-leveling algorithms for extended lifespan
- Block management for efficient data organization
Advantages
- Large storage capacity
- Fast read/write speeds
- Low power consumption
- Compact package size
- Wide operating temperature range
Disadvantages
- Limited write endurance
- Higher cost compared to traditional storage devices
- Susceptible to physical damage if mishandled
Working Principles
The MT29F768G08EECBBJ4-37:B utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the stored information.
Detailed Application Field Plans
The MT29F768G08EECBBJ4-37:B is commonly used in various electronic devices that require high-capacity and non-volatile storage, such as: - Solid-state drives (SSDs) - Embedded systems - Industrial control systems - Automotive applications - Consumer electronics
Detailed and Complete Alternative Models
- MT29F768G08EECBBJ4-36:B
- MT29F768G08EECBBJ4-38:B
- MT29F768G08EECBBJ4-37:A
- MT29F768G08EECBBJ4-37:C
These alternative models offer similar specifications and functionality, providing options for different application requirements.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29F768G08EECBBJ4-37:B en soluciones técnicas
1. What is the capacity of the MT29F768G08EECBBJ4-37:B NAND flash memory?
The MT29F768G08EECBBJ4-37:B has a capacity of 768 gigabits (96 gigabytes).
2. What is the operating voltage range for this NAND flash memory?
The operating voltage range for the MT29F768G08EECBBJ4-37:B is typically between 2.7V and 3.6V.
3. What is the maximum data transfer rate supported by this NAND flash memory?
The MT29F768G08EECBBJ4-37:B supports a maximum data transfer rate of up to 400 megabytes per second.
4. Can this NAND flash memory be used in automotive applications?
Yes, the MT29F768G08EECBBJ4-37:B is designed to meet the requirements of automotive applications and can be used in such environments.
5. Does this NAND flash memory support hardware encryption?
No, the MT29F768G08EECBBJ4-37:B does not have built-in hardware encryption capabilities.
6. What is the endurance rating of this NAND flash memory?
The MT29F768G08EECBBJ4-37:B has an endurance rating of 3,000 program/erase cycles per block.
7. Is this NAND flash memory compatible with standard NAND flash interfaces?
Yes, the MT29F768G08EECBBJ4-37:B is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface) and Toggle Mode.
8. What is the operating temperature range for this NAND flash memory?
The operating temperature range for the MT29F768G08EECBBJ4-37:B is typically between -40°C and +85°C.
9. Can this NAND flash memory be used in industrial applications?
Yes, the MT29F768G08EECBBJ4-37:B is suitable for use in industrial applications due to its wide operating temperature range and high reliability.
10. Does this NAND flash memory support error correction codes (ECC)?
Yes, the MT29F768G08EECBBJ4-37:B supports various error correction codes (ECC) to ensure data integrity and reliability.