Microsemi Corporation
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2N6329

2N6329 Transistor

Product Overview

The 2N6329 is a silicon NPN power transistor designed for general-purpose amplifier and switching applications. This transistor falls under the category of discrete semiconductor devices and is commonly used in electronic circuits for its high voltage and current capabilities.

Basic Information

  • Category: Discrete Semiconductor Device
  • Use: General-purpose amplifier and switching applications
  • Characteristics: High voltage and current capabilities
  • Package: TO-220
  • Essence: Silicon NPN power transistor
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 8A
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 4V
  • Transition Frequency: 3MHz

Detailed Pin Configuration

The 2N6329 transistor has three pins: 1. Collector (C): Connects to the positive supply voltage in most applications. 2. Base (B): Controls the transistor's turn-on and turn-off times. 3. Emitter (E): Connects to the ground or return path of the circuit.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Suitable for both linear and switching applications.
  • Robust construction for reliable performance in demanding environments.

Advantages and Disadvantages

Advantages

  • High voltage and current ratings make it suitable for power applications.
  • Versatile usage in both amplification and switching circuits.
  • Robust construction ensures reliability in harsh conditions.

Disadvantages

  • Relatively large package size compared to smaller SMD transistors.
  • Limited frequency response compared to specialized RF transistors.

Working Principles

The 2N6329 operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals. This property allows the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The 2N6329 transistor finds application in various fields, including: - Power supply circuits - Audio amplifiers - Motor control circuits - Voltage regulators - Switching circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N6329 include: - TIP31C - MJ15003 - MJE13009 - BD139

In conclusion, the 2N6329 transistor offers high voltage and current capabilities, making it suitable for a wide range of general-purpose amplifier and switching applications. Its robust construction and versatile usage make it a popular choice in electronic circuit design.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N6329 en soluciones técnicas

  1. What is the 2N6329 transistor used for?

    • The 2N6329 is a general-purpose NPN bipolar junction transistor commonly used for amplification and switching applications in electronic circuits.

  2. What are the typical operating conditions for the 2N6329 transistor?

    • The 2N6329 transistor typically operates at a maximum collector current of 3A, a maximum collector-emitter voltage of 40V, and a maximum power dissipation of 25W.

  3. How do I identify the pinout of the 2N6329 transistor?

    • The pinout of the 2N6329 transistor is typically identified as the emitter (E), base (B), and collector (C) pins. The flat side of the transistor package usually corresponds to the emitter pin.

  4. Can the 2N6329 be used for audio amplifier applications?

    • Yes, the 2N6329 can be used in audio amplifier circuits due to its ability to amplify low to moderate power levels.

  5. What are some common circuit configurations using the 2N6329 transistor?

    • Common circuit configurations include common emitter, common collector, and common base configurations for amplification and switching purposes.

  6. What are the key parameters to consider when designing with the 2N6329 transistor?

    • Key parameters to consider include the maximum collector current, maximum collector-emitter voltage, gain bandwidth product, and power dissipation.

  7. Can the 2N6329 be used in high-frequency applications?

    • While the 2N6329 can be used in moderate frequency applications, it may not be suitable for high-frequency applications due to its gain bandwidth limitations.

  8. Are there any specific heat dissipation requirements for the 2N6329 transistor?

    • It is important to consider proper heat sinking or thermal management for the 2N6329 transistor, especially when operating at higher power levels to prevent overheating.

  9. What are some common alternatives to the 2N6329 transistor?

    • Common alternatives include transistors with similar specifications such as the 2N2222, BC547, and BC548, depending on the specific application requirements.

  10. Where can I find detailed datasheets and application notes for the 2N6329 transistor?

    • Detailed datasheets and application notes for the 2N6329 transistor can be found on semiconductor manufacturer websites, distributor platforms, or technical documentation repositories.