Microsemi Corporation
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5822SMG/TR13
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5822SMG/TR13 Product Overview

Product Identification

  • Product Name: 5822SMG/TR13
  • Belongs to: Electronic Components
  • Category: Transistors
  • Use: Amplification and switching of electronic signals
  • Characteristics: Small form factor, high gain, low power consumption
  • Package: SMD (Surface Mount Device)
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Typically available in reels of 3000 units

Specifications

  • Type: NPN
  • Maximum Collector-Emitter Voltage (Vce): 40V
  • Maximum Collector Current (Ic): 600mA
  • DC Current Gain (hFE): 100 - 300
  • Power Dissipation (Pd): 625mW
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed
  • Small footprint
  • Suitable for high-frequency applications

Advantages

  • Compact size
  • Versatile application range
  • Reliable performance
  • Low power consumption

Disadvantages

  • Limited maximum voltage and current ratings
  • Sensitivity to temperature variations

Working Principles

The 5822SMG/TR13 operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, allowing for amplification and switching of electronic signals.

Detailed Application Field Plans

  • Audio amplifiers
  • Signal processing circuits
  • Oscillator circuits
  • Switching circuits
  • RF (Radio Frequency) applications

Detailed and Complete Alternative Models

  • 2N2222
  • BC547
  • BC548
  • 2N3904
  • PN2222

This comprehensive entry provides an in-depth understanding of the 5822SMG/TR13 transistor, covering its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

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