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JAN2N6796
Product Overview
Category
The JAN2N6796 is a high-power NPN bipolar junction transistor (BJT) designed for use in power amplifier and switching applications.
Use
It is commonly used in audio amplifiers, power supplies, and industrial control systems.
Characteristics
- High power handling capability
- Low collector-emitter saturation voltage
- Fast switching speed
Package
The JAN2N6796 is typically available in a TO-204AA package.
Essence
This transistor is essential for high-power electronic applications where efficient amplification and switching are required.
Packaging/Quantity
It is usually supplied in bulk packaging with varying quantities depending on the supplier.
Specifications
- Collector-Emitter Voltage: 100V
- Collector Current: 16A
- Power Dissipation: 200W
- Transition Frequency: 4MHz
- Operating Temperature: -65°C to 200°C
Detailed Pin Configuration
- Base
- Emitter
- Collector
Functional Features
- High power amplification capability
- Fast switching speed
- Low saturation voltage
Advantages
- High power handling capacity
- Suitable for high-frequency applications
- Reliable performance under extreme temperatures
Disadvantages
- Relatively large package size
- Limited availability from some suppliers
Working Principles
The JAN2N6796 operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.
Detailed Application Field Plans
This transistor is well-suited for use in: - Audio amplifiers - Power supply units - Industrial control systems
Detailed and Complete Alternative Models
- 2N3055
- MJ15003
- TIP35C
- MJE2955
In conclusion, the JAN2N6796 is a high-power NPN BJT with excellent amplification and switching capabilities, making it an ideal choice for various electronic applications requiring high power handling and fast response times.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de JAN2N6796 en soluciones técnicas
What is JAN2N6796?
- JAN2N6796 is a high-reliability, military-grade silicon NPN power transistor designed for use in demanding applications.
What are the key specifications of JAN2N6796?
- The JAN2N6796 has a maximum collector-emitter voltage of 100V, a maximum collector current of 4A, and a power dissipation of 50W.
What are the typical applications of JAN2N6796?
- JAN2N6796 is commonly used in power supply circuits, motor control, and general purpose switching applications.
What are the temperature ratings for JAN2N6796?
- The device is typically rated for operation over a temperature range of -65°C to 200°C.
Is JAN2N6796 suitable for high-reliability applications?
- Yes, JAN2N6796 is specifically designed for high-reliability and rugged environments, making it suitable for military and aerospace applications.
What are the recommended mounting and handling procedures for JAN2N6796?
- Proper heat sinking and careful handling to prevent electrostatic damage are recommended for optimal performance and reliability.
Can JAN2N6796 be used in automotive applications?
- While it is not specifically designed for automotive use, JAN2N6796 can be considered for certain automotive applications where its specifications meet the requirements.
Are there any common failure modes associated with JAN2N6796?
- Common failure modes include thermal overstress, overcurrent conditions, and voltage spikes. Proper design and protection circuitry can mitigate these risks.
What are the alternatives to JAN2N6796 if it's not available?
- Alternatives may include similar high-reliability transistors such as JAN2N6760, JAN2N6762, or other devices with comparable specifications.
Where can I find detailed application notes for using JAN2N6796 in technical solutions?
- Detailed application notes and technical information can typically be found in the manufacturer's datasheet, application guides, or through direct inquiry with the manufacturer or authorized distributors.