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2N4123BU Transistor
Product Overview
The 2N4123BU is a bipolar junction transistor (BJT) belonging to the category of small-signal transistors. It is commonly used for amplification and switching applications due to its high gain and low noise characteristics. The transistor comes in a TO-92 package and is available in various packaging quantities, making it suitable for both prototyping and production purposes.
Basic Information
- Category: Small-signal transistor
- Use: Amplification and switching
- Characteristics: High gain, low noise
- Package: TO-92
- Packaging/Quantity: Various options available
Specifications
- Maximum Power Dissipation: 625mW
- Collector-Base Voltage (VCBO): 30V
- Collector-Emitter Voltage (VCEO): 25V
- Emitter-Base Voltage (VEBO): 7V
- Collector Current (IC): 200mA
- DC Current Gain (hFE): 35 - 300
Detailed Pin Configuration
The 2N4123BU transistor has three pins: 1. Collector (C): Connects to the positive supply voltage. 2. Base (B): Input terminal for controlling the transistor's operation. 3. Emitter (E): Connects to the ground or common reference point.
Functional Features
The 2N4123BU offers high current gain, making it suitable for use in low-power amplification circuits. Its low noise characteristics also make it ideal for signal processing applications where fidelity is crucial.
Advantages and Disadvantages
Advantages
- High gain
- Low noise
- Versatile packaging options
Disadvantages
- Limited maximum power dissipation
- Relatively low collector-emitter voltage rating
Working Principles
When a small current flows into the base terminal, it controls a much larger current flowing between the collector and emitter terminals. This property allows the transistor to amplify signals or act as a switch in electronic circuits.
Detailed Application Field Plans
The 2N4123BU transistor finds application in various fields, including: - Audio amplification - Signal processing - Switching circuits - Oscillator circuits
Detailed and Complete Alternative Models
Some alternative models to the 2N4123BU include: - 2N3904 - BC547 - 2N2222
In conclusion, the 2N4123BU transistor is a versatile component with high gain and low noise characteristics, making it suitable for a wide range of amplification and switching applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2N4123BU en soluciones técnicas
Sure, here are 10 common questions and answers related to the application of 2N4123BU in technical solutions:
What is the maximum collector current for 2N4123BU?
- The maximum collector current (Ic) for 2N4123BU is 100mA.
What is the maximum power dissipation for 2N4123BU?
- The maximum power dissipation for 2N4123BU is 350mW.
What is the typical hFE (DC current gain) for 2N4123BU?
- The typical hFE for 2N4123BU is 40-300.
What are the typical applications for 2N4123BU?
- 2N4123BU is commonly used in low-power amplification, switching, and linear applications.
What is the maximum voltage rating for 2N4123BU?
- The maximum voltage rating for 2N4123BU is 40V.
Is 2N4123BU suitable for use in audio amplifier circuits?
- Yes, 2N4123BU can be used in low-power audio amplifier circuits.
Can 2N4123BU be used in low-frequency oscillator circuits?
- Yes, 2N4123BU is suitable for use in low-frequency oscillator circuits.
What are the recommended operating temperature ranges for 2N4123BU?
- The recommended operating temperature range for 2N4123BU is -55°C to +150°C.
Does 2N4123BU require a heat sink for certain applications?
- For high-power or high-temperature applications, a heat sink may be required for 2N4123BU.
Are there any specific precautions to consider when using 2N4123BU in technical solutions?
- It's important to ensure proper biasing and thermal management when using 2N4123BU in technical solutions to maximize performance and reliability.