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BC858BLT1G
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BC858BLT1G

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Small signal NPN transistor, low power dissipation, high current gain
Package: SOT-23
Essence: BC858BLT1G is a versatile NPN transistor suitable for various electronic applications.
Packaging/Quantity: Available in reels of 3000 units

Specifications

  • Collector-Emitter Voltage (VCEO): 30V
  • Collector-Base Voltage (VCBO): 30V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 225mW
  • Transition Frequency (fT): 150MHz

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low power dissipation
  • Fast switching speed

Advantages

  • Versatile usage in amplification and switching circuits
  • Small package size
  • Suitable for low-power applications

Disadvantages

  • Limited collector current compared to other transistors
  • Lower transition frequency compared to some alternatives

Working Principles

BC858BLT1G operates as a current-controlled switch or amplifier. When a small current flows into the base, it controls a much larger current between the collector and emitter.

Detailed Application Field Plans

  • Audio amplifiers
  • Signal amplification in sensor circuits
  • Switching applications in electronic devices

Detailed and Complete Alternative Models

  • BC847BLT1G
  • BC856BLT1G
  • 2N3904
  • 2N2222A

Note: The above information is for reference purposes only. Always refer to the datasheet for the most accurate and up-to-date specifications.

This entry provides a comprehensive overview of the BC858BLT1G transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de BC858BLT1G en soluciones técnicas

  1. What is the BC858BLT1G transistor used for?

    • The BC858BLT1G is a general-purpose PNP transistor commonly used in amplification and switching applications.

  2. What are the typical operating conditions for the BC858BLT1G?

    • The BC858BLT1G operates with a maximum collector current of 100mA, a maximum collector-emitter voltage of 30V, and a maximum power dissipation of 200mW.

  3. Can the BC858BLT1G be used for audio amplification?

    • Yes, the BC858BLT1G can be used for small-signal audio amplification due to its low noise and high gain characteristics.

  4. What are some common circuit configurations using the BC858BLT1G?

    • Common circuit configurations include common emitter, common base, and emitter follower configurations for amplification and switching purposes.

  5. Is the BC858BLT1G suitable for low-power switching applications?

    • Yes, the BC858BLT1G is suitable for low-power switching applications due to its moderate current and voltage ratings.

  6. What are the typical gain characteristics of the BC858BLT1G?

    • The BC858BLT1G has a typical DC current gain (hFE) ranging from 110 to 800, making it suitable for various amplification tasks.

  7. Are there any specific thermal considerations when using the BC858BLT1G?

    • It is important to consider proper heat sinking or thermal management when operating the BC858BLT1G near its maximum power dissipation to ensure reliability.

  8. Can the BC858BLT1G be used in low-noise amplifier designs?

    • Yes, the BC858BLT1G's low noise characteristics make it suitable for use in low-noise amplifier designs, particularly in audio and sensor applications.

  9. What are the recommended storage and operating temperature ranges for the BC858BLT1G?

    • The BC858BLT1G is typically rated for storage and operating temperatures ranging from -55°C to 150°C, making it suitable for a wide range of environments.

  10. Are there any known limitations or failure modes associated with the BC858BLT1G?

    • While the BC858BLT1G is a reliable component, it is important to avoid exceeding its maximum ratings to prevent potential breakdown or failure. Additionally, ESD protection should be considered during handling and assembly to prevent damage.