FQD13N10TF

Introduction

The FQD13N10TF is a power MOSFET belonging to the category of electronic components. This device is commonly used in various electronic circuits and applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Electronic circuits and applications
• Characteristics: High power handling capacity, low on-resistance, fast switching speed
• Package: TO-252 (DPAK)
• Essence: Efficient power management
• Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

• Voltage Rating: 100V
• Current Rating: 13A
• On-Resistance: 0.19Ω
• Gate Charge: 16nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FQD13N10TF follows the standard pin configuration for a TO-252 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High voltage capability
• Low gate charge
• Fast switching speed
• Low on-resistance

Advantages and Disadvantages

Advantages

• Efficient power management
• Suitable for high-power applications
• Fast response time

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to static electricity

Working Principles

The FQD13N10TF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When a sufficient voltage is applied to the gate, the MOSFET allows a significant amount of current to pass through.

Detailed Application Field Plans

The FQD13N10TF finds extensive use in various applications, including: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the FQD13N10TF include: - IRF540N - STP16NF06L - AOD4184

In conclusion, the FQD13N10TF power MOSFET offers efficient power management and is well-suited for high-power applications across diverse industries.

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