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NDD05N50Z-1G
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NDD05N50Z-1G

Product Overview

Category

The NDD05N50Z-1G belongs to the category of power MOSFETs.

Use

It is used as a high-voltage, fast-switching N-channel enhancement-mode power MOSFET.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The NDD05N50Z-1G is typically available in a TO-252 package.

Essence

This product is essential for power management and control in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 5A
  • On-Resistance (RDS(on)): 1.2Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 18nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The NDD05N50Z-1G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low gate charge enables fast switching, reducing power losses.
  • Low on-resistance minimizes conduction losses.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Fast switching speed for efficient power management
  • Low on-resistance reduces power losses

Disadvantages

  • Sensitivity to static electricity
  • Potential for thermal issues at high currents

Working Principles

The NDD05N50Z-1G operates based on the principles of field-effect transistors, where the application of a voltage to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The NDD05N50Z-1G is commonly used in: - Switched-mode power supplies - Motor control systems - LED lighting applications - Solar inverters - Electronic ballasts

Detailed and Complete Alternative Models

Some alternative models to the NDD05N50Z-1G include: - IRF840 - FQP27P06 - STP16NF06L - IPP60R190E6

In conclusion, the NDD05N50Z-1G power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power management applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de NDD05N50Z-1G en soluciones técnicas

  1. What is the maximum voltage rating for NDD05N50Z-1G?

    • The maximum voltage rating for NDD05N50Z-1G is 500V.

  2. What is the maximum current rating for NDD05N50Z-1G?

    • The maximum current rating for NDD05N50Z-1G is 5A.

  3. What type of package does NDD05N50Z-1G come in?

    • NDD05N50Z-1G comes in a TO-252 (DPAK) package.

  4. What is the on-state resistance of NDD05N50Z-1G?

    • The on-state resistance of NDD05N50Z-1G is typically 0.65 ohms.

  5. What are the typical applications for NDD05N50Z-1G?

    • NDD05N50Z-1G is commonly used in power management and switching applications, such as in DC-DC converters and motor control.

  6. Is NDD05N50Z-1G suitable for high-frequency switching applications?

    • Yes, NDD05N50Z-1G is designed for high-frequency switching applications.

  7. What is the operating temperature range for NDD05N50Z-1G?

    • The operating temperature range for NDD05N50Z-1G is -55°C to 150°C.

  8. Does NDD05N50Z-1G have built-in protection features?

    • NDD05N50Z-1G offers built-in protection against overcurrent and overtemperature conditions.

  9. Can NDD05N50Z-1G be used in automotive applications?

    • Yes, NDD05N50Z-1G is suitable for use in automotive systems, including engine control and power distribution.

  10. What are the key advantages of using NDD05N50Z-1G in technical solutions?

    • Some key advantages of NDD05N50Z-1G include its low on-state resistance, high frequency capability, and robustness in various power management applications.