ON Semiconductor
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
NSVMMBT3906TT1G
Ver Detalle Hojas de datos

NSVMMBT3906TT1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small signal PNP transistor, high current gain, low voltage drop
Package: SOT-23
Essence: High-performance small signal transistor
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Emitter Voltage (VCEO): -40V
  • Collector-Base Voltage (VCBO): -40V
  • Emitter-Base Voltage (VEBO): -5V
  • Continuous Collector Current (IC): -200mA
  • Power Dissipation (Ptot): 225mW
  • Transition Frequency (fT): 250MHz

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages

  • Small package size
  • High current gain
  • Low voltage drop

Disadvantages

  • Limited power dissipation capability
  • Limited collector current rating

Working Principles

The NSVMMBT3906TT1G is a small signal PNP transistor that operates by amplifying and switching electronic signals. When a small current flows into the base terminal, it controls a much larger current flowing between the collector and emitter terminals, allowing for signal amplification and switching.

Detailed Application Field Plans

The NSVMMBT3906TT1G is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications. Its small size and high current gain make it suitable for compact electronic devices where space is limited.

Detailed and Complete Alternative Models

  • 2N3906
  • BC557
  • KSP2222A
  • MPSA56

This completes the entry for NSVMMBT3906TT1G, covering its product details, specifications, features, and application information.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de NSVMMBT3906TT1G en soluciones técnicas

  1. What is NSVMMBT3906TT1G?

    • NSVMMBT3906TT1G is a PNP Bipolar Transistor designed for general purpose amplifier and switching applications.

  2. What are the key features of NSVMMBT3906TT1G?

    • The key features include a high current gain, low saturation voltage, and a maximum power dissipation of 350mW.

  3. What are the typical applications of NSVMMBT3906TT1G?

    • Typical applications include audio amplification, signal processing, and general switching circuits.

  4. What is the maximum collector current of NSVMMBT3906TT1G?

    • The maximum collector current is 200mA.

  5. What is the maximum collector-emitter voltage of NSVMMBT3906TT1G?

    • The maximum collector-emitter voltage is 40V.

  6. What is the thermal resistance of NSVMMBT3906TT1G?

    • The thermal resistance is approximately 417°C/W.

  7. Is NSVMMBT3906TT1G suitable for high-frequency applications?

    • No, it is not specifically designed for high-frequency applications.

  8. Can NSVMMBT3906TT1G be used in low-power applications?

    • Yes, it can be used in low-power applications due to its low saturation voltage and high current gain.

  9. What are the recommended operating conditions for NSVMMBT3906TT1G?

    • The recommended operating temperature range is -55°C to 150°C and the maximum junction temperature is 150°C.

  10. Where can I find the detailed datasheet for NSVMMBT3906TT1G?

    • The detailed datasheet can be found on the manufacturer's website or through authorized distributors.