NTB75N06LT4G - Product Overview

Introduction

The NTB75N06LT4G is a power MOSFET belonging to the category of electronic components. This semiconductor device is widely used in various applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The NTB75N06LT4G is commonly used for switching and amplifying electronic signals in power supply circuits, motor control, and other high-power applications.
• Characteristics: This MOSFET exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The NTB75N06LT4G is typically available in a TO-263 package, providing efficient thermal dissipation and mechanical strength.
• Essence: Its essence lies in providing reliable and efficient power management solutions in various electronic systems.
• Packaging/Quantity: It is usually supplied in reels or tubes containing a specific quantity based on the manufacturer's specifications.

Specifications

• Voltage Rating: 60V
• Current Rating: 75A
• On-State Resistance (RDS(on)): 8.5mΩ (max)
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-263

Detailed Pin Configuration

The NTB75N06LT4G follows the standard pin configuration for a TO-263 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low On-State Resistance: Enables minimal power loss and high efficiency in power conversion applications.
• High Switching Speed: Facilitates rapid switching transitions, suitable for high-frequency operation.
• Low Gate Charge: Allows for efficient control of the MOSFET, reducing drive circuit complexity and power dissipation.

Advantages and Disadvantages

Advantages

• High current-carrying capability
• Low conduction losses
• Fast switching speed
• Suitable for high-frequency applications

Disadvantages

• Sensitivity to static electricity
• Requires careful handling during assembly and operation

Working Principles

The NTB75N06LT4G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents with minimal power dissipation.

Detailed Application Field Plans

The NTB75N06LT4G finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - DC-DC converters - Inverters for renewable energy systems - Automotive powertrain and battery management

Detailed and Complete Alternative Models

• IRF3205
• FDP8870
• STP80NF55-06

In summary, the NTB75N06LT4G power MOSFET offers exceptional performance and reliability in various high-power electronic applications, making it a preferred choice for power management solutions.

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