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BR24L08FVT-WE2

BR24L08FVT-WE2

Product Overview

Category

The BR24L08FVT-WE2 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This chip is primarily used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

  • Non-volatile: The BR24L08FVT-WE2 retains stored data even when power is removed.
  • Electrically erasable: Data can be erased and reprogrammed electronically.
  • High storage capacity: The chip has a storage capacity of 8 kilobits (1 kilobyte).
  • Low power consumption: It operates at low voltage levels, making it energy-efficient.
  • Fast access time: The chip provides quick access to stored data.

Package

The BR24L08FVT-WE2 is available in a small surface-mount package. It is commonly packaged in a 5-pin SOP (Small Outline Package).

Essence

The essence of the BR24L08FVT-WE2 lies in its ability to store and retrieve data reliably in electronic devices, ensuring data integrity and persistence.

Packaging/Quantity

The chip is typically sold in reels or tubes containing multiple units. The exact quantity may vary depending on the manufacturer and supplier.

Specifications

  • Memory Capacity: 8 kilobits (1 kilobyte)
  • Interface: I2C (Inter-Integrated Circuit)
  • Supply Voltage: 1.7V to 5.5V
  • Operating Temperature Range: -40°C to +85°C
  • Write Endurance: 1 million cycles
  • Data Retention: 100 years

Detailed Pin Configuration

The BR24L08FVT-WE2 chip has the following pin configuration:

  1. VCC: Power supply voltage
  2. GND: Ground reference
  3. SDA: Serial Data Line (I2C bus)
  4. SCL: Serial Clock Line (I2C bus)
  5. WP: Write Protect (optional pin for write protection)

Functional Features

  • Read and write operations: The chip allows for both reading and writing of data.
  • Sequential read: It supports sequential read operations, enabling efficient data retrieval.
  • Write protection: The optional Write Protect (WP) pin can be used to protect the stored data from accidental modification.
  • Software write protection: The chip provides software-based write protection, allowing specific memory areas to be locked.

Advantages and Disadvantages

Advantages

  • Non-volatile storage ensures data persistence.
  • Electrically erasable and reprogrammable, providing flexibility.
  • Low power consumption, making it suitable for battery-powered devices.
  • Compact package size enables integration into small form factor designs.
  • Fast access time enhances overall system performance.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Relatively higher cost per kilobyte compared to larger memory chips.
  • Susceptible to electrical noise and interference, requiring proper shielding and signal conditioning.

Working Principles

The BR24L08FVT-WE2 utilizes EEPROM technology, which employs a floating gate transistor structure to store and retrieve data. When data is written, an electric charge is trapped in the floating gate, altering the transistor's behavior. This charge can be removed during the erase operation, allowing the transistor to return to its original state. The stored charge determines whether a memory cell represents a logical "0" or "1".

Detailed Application Field Plans

The BR24L08FVT-WE2 finds applications in various fields, including:

  1. Embedded Systems: Used for storing configuration data, firmware updates, and calibration parameters in microcontrollers and system-on-chips.
  2. Automotive Electronics: Employed in automotive modules for storing critical data, such as mileage, vehicle settings, and fault codes.
  3. Industrial Automation: Utilized in programmable logic controllers (PLCs) and industrial control systems for storing process parameters, user settings, and event logs.
  4. Consumer Electronics: Integrated into devices like smart TVs, set-top boxes, and audio systems to store user preferences, channel lists, and firmware updates.

Detailed and Complete Alternative Models

  1. BR24L04FVT-WE2: A similar EEPROM chip with a storage capacity of 4 kilobits.
  2. BR24L16FVT-WE2: An alternative model offering a higher storage capacity of 16 kilobits.
  3. AT24C08AN: An EEPROM chip from a different manufacturer with comparable specifications and pin configuration.

These alternative models provide options with varying storage capacities and may be suitable for different application requirements.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de BR24L08FVT-WE2 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of BR24L08FVT-WE2 in technical solutions:

  1. Question: What is the maximum operating frequency of the BR24L08FVT-WE2?
    Answer: The maximum operating frequency of the BR24L08FVT-WE2 is 400 kHz.

  2. Question: What is the storage capacity of the BR24L08FVT-WE2?
    Answer: The BR24L08FVT-WE2 has a storage capacity of 8 kilobits (1 kilobyte).

  3. Question: Can the BR24L08FVT-WE2 be used for both read and write operations?
    Answer: Yes, the BR24L08FVT-WE2 can be used for both read and write operations.

  4. Question: What is the voltage range for the power supply of the BR24L08FVT-WE2?
    Answer: The voltage range for the power supply of the BR24L08FVT-WE2 is 1.7V to 5.5V.

  5. Question: Does the BR24L08FVT-WE2 support sequential read operations?
    Answer: Yes, the BR24L08FVT-WE2 supports sequential read operations.

  6. Question: Is the BR24L08FVT-WE2 compatible with I2C communication protocol?
    Answer: Yes, the BR24L08FVT-WE2 is compatible with the I2C communication protocol.

  7. Question: Can the BR24L08FVT-WE2 operate in a wide temperature range?
    Answer: Yes, the BR24L08FVT-WE2 can operate in a wide temperature range from -40°C to +85°C.

  8. Question: Does the BR24L08FVT-WE2 have built-in write protection features?
    Answer: Yes, the BR24L08FVT-WE2 has built-in write protection features to prevent accidental data modification.

  9. Question: What is the typical standby current consumption of the BR24L08FVT-WE2?
    Answer: The typical standby current consumption of the BR24L08FVT-WE2 is 1 µA.

  10. Question: Can multiple BR24L08FVT-WE2 devices be connected in a daisy-chain configuration?
    Answer: No, the BR24L08FVT-WE2 does not support daisy-chaining multiple devices. Each device needs to be individually addressed.

Please note that these questions and answers are specific to the BR24L08FVT-WE2 and its technical specifications.