BR24T128FVT-WE2

Product Overview

Category

BR24T128FVT-WE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The BR24T128FVT-WE2 has a storage capacity of 128 kilobits (16 kilobytes).
• Fast access time: It provides quick read and write operations.
• Low power consumption: The device operates efficiently, consuming minimal power.
• Wide operating voltage range: It can function within a voltage range of 1.7V to 5.5V.

Package

The BR24T128FVT-WE2 is available in a small surface-mount package, making it suitable for compact electronic devices.

Essence

The essence of this product lies in its ability to reliably store and retrieve data in various electronic applications.

Packaging/Quantity

The BR24T128FVT-WE2 is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory capacity: 128 kilobits (16 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 10 years
• Write endurance: 1 million cycles

Detailed Pin Configuration

The BR24T128FVT-WE2 has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. SDA: Serial data input/output for I2C communication
4. SCL: Serial clock input for I2C communication
5. WP: Write protect pin (optional)
6. HOLD: Hold input pin (optional)

Functional Features

• Random access: Allows reading and writing of data at any memory location.
• Page write mode: Enables simultaneous programming of multiple bytes in a single operation.
• Software write protection: Provides the ability to protect specific memory areas from being overwritten.
• Sequential read mode: Facilitates efficient retrieval of consecutive data.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing a significant amount of data.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Wide operating voltage range enhances compatibility with various systems.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Relatively higher cost per kilobyte compared to alternative solutions.

Working Principles

The BR24T128FVT-WE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within floating gate transistors, which can be electrically programmed or erased. The stored charges represent binary information, allowing the device to retain data even when power is removed.

Detailed Application Field Plans

The BR24T128FVT-WE2 finds applications in various electronic systems, including but not limited to: - Consumer electronics - Automotive systems - Industrial automation - Medical devices - Communication equipment

Detailed and Complete Alternative Models

1. BR24T64F-WE2: 64 kilobits (8 kilobytes) capacity, similar features and specifications.
2. BR24T256FVT-WE2: 256 kilobits (32 kilobytes) capacity, higher storage capacity than BR24T128FVT-WE2.
3. BR24T512F-WE2: 512 kilobits (64 kilobytes) capacity, higher storage capacity than BR24T128FVT-WE2.

These alternative models offer different storage capacities to cater to varying application requirements.

In conclusion, the BR24T128FVT-WE2 is a non-volatile memory device with a capacity of 128 kilobits. It provides fast access time, low power consumption, and a wide operating voltage range. The product finds applications in diverse electronic systems and offers alternatives with varying storage capacities.