SCT2H12NYTB
Product Category: Semiconductor Transistor
Basic Information Overview: - Category: Power MOSFET - Use: Switching applications in power supplies, motor control, and other high-power electronic devices. - Characteristics: High voltage capability, low on-resistance, fast switching speed. - Package: TO-220AB - Essence: Silicon-based power transistor for high-power applications. - Packaging/Quantity: Typically packaged individually, quantity varies by manufacturer.
Specifications: - Voltage Rating: 1200V - Current Rating: 30A - On-Resistance: 0.12Ω - Gate Threshold Voltage: 2.5V - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - High voltage capability allows for use in high-power applications. - Low on-resistance minimizes power loss and heat generation. - Fast switching speed enables efficient power control.
Advantages: - Suitable for high-power applications due to its high voltage rating. - Low on-resistance results in minimal power dissipation. - Fast switching speed enhances efficiency in power control.
Disadvantages: - Higher cost compared to lower voltage transistors. - Requires careful handling and thermal management due to high power dissipation.
Working Principles: The SCT2H12NYTB operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the transistor switches on, allowing current to flow through it.
Detailed Application Field Plans: - Power supplies: Used in switch-mode power supplies for efficient power conversion. - Motor control: Employed in motor drive circuits for precise and efficient control of electric motors. - High-power electronic devices: Utilized in various high-power applications such as inverters and industrial equipment.
Detailed and Complete Alternative Models: - SCT2H10NYTB: Lower voltage rating (1000V) version of the same transistor. - SCT2H15NYTB: Higher voltage rating (1500V) version of the same transistor. - IRFP460: Similar power MOSFET with a different package and specifications.
This comprehensive entry provides an in-depth understanding of the SCT2H12NYTB semiconductor transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
What is SCT2H12NYTB?
What are the key properties of SCT2H12NYTB?
In what technical applications can SCT2H12NYTB be used?
How does SCT2H12NYTB compare to other materials in terms of thermal conductivity?
Is SCT2H12NYTB suitable for high-temperature environments?
Can SCT2H12NYTB be machined or formed into specific shapes?
Does SCT2H12NYTB require any special handling or storage considerations?
Are there any safety considerations when working with SCT2H12NYTB?
Can SCT2H12NYTB be used in combination with other materials in technical solutions?
Where can I obtain detailed technical specifications and data sheets for SCT2H12NYTB?