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STB34N50DM2AG

STB34N50DM2AG

Introduction

The STB34N50DM2AG is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance capabilities.

Basic Information Overview

  • Category: Semiconductor device
  • Use: Power switching applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-263-3 (D2PAK)
  • Essence: Power MOSFET for efficient power management
  • Packaging/Quantity: Typically packaged in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 500V
  • Current Rating: 34A
  • On-Resistance: 0.085 ohms
  • Gate Threshold Voltage: 3V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STB34N50DM2AG features a standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability suitable for power applications
  • Low on-resistance for reduced power dissipation
  • Fast switching speed for improved efficiency

Advantages and Disadvantages

Advantages

  • High voltage rating
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Larger physical size due to high voltage capability

Working Principles

The STB34N50DM2AG operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate voltage is applied, the MOSFET allows current to flow between the drain and source terminals.

Detailed Application Field Plans

The STB34N50DM2AG is commonly used in the following application fields: - Switch-mode power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the STB34N50DM2AG include: - STB30N60DM2AG - STB40N60DM2AG - STB50N60DM2AG

In conclusion, the STB34N50DM2AG is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de STB34N50DM2AG en soluciones técnicas

  1. What is the maximum drain-source voltage of STB34N50DM2AG?

    • The maximum drain-source voltage of STB34N50DM2AG is 500V.
  2. What is the continuous drain current rating of STB34N50DM2AG?

    • The continuous drain current rating of STB34N50DM2AG is 34A.
  3. Can STB34N50DM2AG be used in high-frequency applications?

    • Yes, STB34N50DM2AG can be used in high-frequency applications due to its low input and output capacitance.
  4. What is the on-resistance of STB34N50DM2AG?

    • The on-resistance of STB34N50DM2AG is typically 0.085 ohms.
  5. Is STB34N50DM2AG suitable for power switching applications?

    • Yes, STB34N50DM2AG is well-suited for power switching applications due to its high voltage and current ratings.
  6. Does STB34N50DM2AG require a heat sink for operation?

    • Depending on the application and operating conditions, a heat sink may be required to ensure optimal thermal performance.
  7. What are the typical gate charge characteristics of STB34N50DM2AG?

    • The typical gate charge characteristics of STB34N50DM2AG include low gate charge and improved switching performance.
  8. Can STB34N50DM2AG be used in automotive applications?

    • Yes, STB34N50DM2AG is suitable for automotive applications, offering reliable performance in demanding environments.
  9. What are the recommended operating temperature range for STB34N50DM2AG?

    • The recommended operating temperature range for STB34N50DM2AG is -55°C to 150°C.
  10. Does STB34N50DM2AG have built-in protection features?

    • STB34N50DM2AG offers built-in protection against overcurrent, overvoltage, and thermal issues, enhancing its reliability in various technical solutions.