Consulte las especificaciones para obtener detalles del producto.
STB6N60M2
Introduction
The STB6N60M2 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Semiconductor Device
- Use: Power switching applications
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-220FP
- Essence: Power MOSFET for efficient power management
- Packaging/Quantity: Typically available in reels or tubes
Specifications
- Voltage Rating: 600V
- Current Rating: 6A
- On-Resistance (max): 1.5Ω
- Gate Threshold Voltage (typ): 3V
- Gate Charge (typ): 16nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STB6N60M2 features a standard TO-220FP pin configuration with three pins: Gate (G), Drain (D), and Source (S).
| Pin | Description | |-----|-------------| | G | Gate | | D | Drain | | S | Source |
Functional Features
- High voltage capability for power applications
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved efficiency
Advantages and Disadvantages
Advantages
- High voltage capability suitable for power applications
- Low on-resistance leads to reduced power losses
- Fast switching speed enhances efficiency
Disadvantages
- Higher gate threshold voltage compared to some alternative models
- Limited current rating for high-power applications
Working Principles
The STB6N60M2 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The STB6N60M2 is widely used in various power management applications, including: - Switching power supplies - Motor control - Lighting systems - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the STB6N60M2 include: - IRF840 - FQP30N06L - STP16NF06
In conclusion, the STB6N60M2 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.
[Word count: 320]
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de STB6N60M2 en soluciones técnicas
What is the maximum drain-source voltage rating of STB6N60M2?
- The maximum drain-source voltage rating of STB6N60M2 is 600V.
What is the continuous drain current rating of STB6N60M2?
- The continuous drain current rating of STB6N60M2 is 6A.
Can STB6N60M2 be used in switching power supplies?
- Yes, STB6N60M2 can be used in switching power supplies due to its high voltage and current ratings.
What is the typical on-resistance of STB6N60M2?
- The typical on-resistance of STB6N60M2 is 1.5 ohms.
Is STB6N60M2 suitable for motor control applications?
- Yes, STB6N60M2 is suitable for motor control applications due to its high voltage and current handling capabilities.
Does STB6N60M2 require a heat sink for operation?
- Depending on the application and operating conditions, a heat sink may be required for optimal performance of STB6N60M2.
What is the maximum junction temperature of STB6N60M2?
- The maximum junction temperature of STB6N60M2 is 150°C.
Can STB6N60M2 be used in flyback converters?
- Yes, STB6N60M2 can be used in flyback converters as it can handle high voltages and currents.
What are the typical gate charge characteristics of STB6N60M2?
- The typical gate charge characteristics of STB6N60M2 are low, making it suitable for high-frequency switching applications.
Is STB6N60M2 RoHS compliant?
- Yes, STB6N60M2 is RoHS compliant, ensuring it meets environmental standards for hazardous substances.