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STB80NF55-08AG

STB80NF55-08AG

Introduction

The STB80NF55-08AG is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Electronic Component
  • Use: Power MOSFET
  • Characteristics: High power handling capacity, low on-resistance, fast switching speed
  • Package: TO-263-3 (D2PAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer

Specifications

  • Voltage Rating: 80V
  • Current Rating: 55A
  • On-Resistance: 8mΩ
  • Gate Charge: 45nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The STB80NF55-08AG follows the standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High Power Handling: Capable of handling high currents and voltages efficiently.
  • Low On-Resistance: Minimizes power loss and heat generation during operation.
  • Fast Switching Speed: Enables rapid switching between on and off states, suitable for high-frequency applications.

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Low power dissipation
  • Fast response time

Disadvantages

  • Sensitivity to voltage spikes
  • Higher cost compared to traditional power transistors

Working Principles

The STB80NF55-08AG operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device. When a sufficient voltage is applied to the gate terminal, it allows the current to flow between the source and drain terminals with minimal resistance.

Detailed Application Field Plans

The STB80NF55-08AG finds extensive use in various applications, including: - Switching power supplies - Motor control - LED lighting - Battery management systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the STB80NF55-08AG include: - IRF1405 - FDP8870 - AUIRFN8409

In conclusion, the STB80NF55-08AG power MOSFET offers efficient power management, low on-resistance, and fast switching speed, making it suitable for diverse applications in the electronics industry.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de STB80NF55-08AG en soluciones técnicas

  1. What is the maximum drain-source voltage of STB80NF55-08AG?

    • The maximum drain-source voltage is 55V.
  2. What is the continuous drain current of STB80NF55-08AG?

    • The continuous drain current is 80A.
  3. What is the on-state resistance of STB80NF55-08AG?

    • The on-state resistance is typically 8mΩ.
  4. What are the typical applications for STB80NF55-08AG?

    • Typical applications include power supplies, motor control, and automotive systems.
  5. What is the gate threshold voltage of STB80NF55-08AG?

    • The gate threshold voltage is typically 2.5V.
  6. What is the maximum junction temperature of STB80NF55-08AG?

    • The maximum junction temperature is 175°C.
  7. What is the input capacitance of STB80NF55-08AG?

    • The input capacitance is typically 5200pF.
  8. What is the output capacitance of STB80NF55-08AG?

    • The output capacitance is typically 300pF.
  9. What is the total gate charge of STB80NF55-08AG?

    • The total gate charge is typically 60nC.
  10. What are the recommended operating conditions for STB80NF55-08AG?

    • The recommended operating temperature range is -55°C to 175°C, and the recommended gate-source voltage is ±20V.