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STD9NM50N
Product Overview
- Category: Power MOSFET
- Use: Switching applications in power supplies, lighting, and motor control
- Characteristics: High voltage capability, low input capacitance, fast switching speed
- Package: TO-252 (DPAK)
- Essence: Power transistor for efficient switching applications
- Packaging/Quantity: Tape and reel, 2500 units per reel
Specifications
- Drain-Source Voltage (VDSS): 500V
- Continuous Drain Current (ID): 8.5A
- On-State Resistance (RDS(on)): 1.6Ω
- Gate Threshold Voltage (VGS(th)): 3V
- Total Gate Charge (QG): 12nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STD9NM50N has three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Output terminal connected to the load 3. Source (S): Connected to the ground or return path
Functional Features
- Low input capacitance for high-speed switching
- High voltage capability for use in various applications
- Fast switching speed for improved efficiency
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low input capacitance enables fast switching
- Compact TO-252 package for space-constrained designs
Disadvantages
- Relatively higher on-state resistance compared to some alternative models
- Limited continuous drain current compared to higher-power MOSFETs
Working Principles
The STD9NM50N operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow through, enabling efficient switching in various electronic circuits.
Detailed Application Field Plans
The STD9NM50N is well-suited for use in the following applications: - Switching power supplies - LED lighting drivers - Motor control circuits - Inverters and converters
Detailed and Complete Alternative Models
Some alternative models to the STD9NM50N include: - STP9NK50ZFP - IRF540NPBF - FQP27P06
In summary, the STD9NM50N is a power MOSFET designed for efficient switching applications in various electronic circuits. With its high voltage capability, low input capacitance, and fast switching speed, it is suitable for use in power supplies, lighting, and motor control applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de STD9NM50N en soluciones técnicas
What is the maximum drain-source voltage of STD9NM50N?
- The maximum drain-source voltage of STD9NM50N is 500V.
What is the continuous drain current rating of STD9NM50N?
- The continuous drain current rating of STD9NM50N is 9A.
Can STD9NM50N be used in high-frequency applications?
- Yes, STD9NM50N can be used in high-frequency applications due to its fast switching characteristics.
What type of package does STD9NM50N come in?
- STD9NM50N comes in a TO-251 package.
Is STD9NM50N suitable for use in power supplies?
- Yes, STD9NM50N is suitable for use in power supplies and other power management applications.
Does STD9NM50N have built-in protection features?
- STD9NM50N does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the typical on-resistance of STD9NM50N?
- The typical on-resistance of STD9NM50N is 0.65 ohms.
Can STD9NM50N be used in automotive applications?
- Yes, STD9NM50N can be used in automotive applications, provided it meets the specific requirements and standards for automotive electronics.
What are the thermal characteristics of STD9NM50N?
- STD9NM50N has low thermal resistance and is designed to efficiently dissipate heat when properly mounted on a heatsink.
Are there any application notes or reference designs available for using STD9NM50N in technical solutions?
- Yes, application notes and reference designs are available from the manufacturer to assist with integrating STD9NM50N into technical solutions.