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STI23NM60ND
Introduction
The STI23NM60ND is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Used for power switching applications in electronic circuits
- Characteristics: High voltage capability, low input capacitance, fast switching speed
- Package: TO-220FP
- Essence: Efficient power management and control
- Packaging/Quantity: Typically packaged in reels or tubes containing multiple units
Specifications
- Voltage Rating: 600V
- Current Rating: 23A
- On-state Resistance: 0.19Ω
- Gate Threshold Voltage: 3V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STI23NM60ND features a standard TO-220FP pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High voltage capability allows for use in various power applications
- Low input capacitance enables fast switching speed
- Enhanced thermal performance for improved reliability
Advantages and Disadvantages
Advantages
- High voltage rating suitable for diverse applications
- Low on-state resistance for efficient power management
- Fast switching speed for improved performance
Disadvantages
- Higher cost compared to some alternative models
- Limited availability from certain suppliers
Working Principles
The STI23NM60ND operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, the device switches on, allowing current to flow between the drain and source terminals.
Detailed Application Field Plans
The STI23NM60ND finds extensive use in various applications, including: - Switching power supplies - Motor control - Lighting systems - Audio amplifiers - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the STI23NM60ND include: - IRF840 - FQP30N06L - IRL540
In conclusion, the STI23NM60ND power MOSFET offers high voltage capability, low input capacitance, and fast switching speed, making it suitable for a wide range of power switching applications in electronic circuits.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de STI23NM60ND en soluciones técnicas
What is STI23NM60ND?
- STI23NM60ND is a high voltage N-channel Power MOSFET designed for applications such as switching power supplies, motor control, and lighting.
What is the maximum drain-source voltage of STI23NM60ND?
- The maximum drain-source voltage of STI23NM60ND is 600V.
What is the typical on-state resistance of STI23NM60ND?
- The typical on-state resistance of STI23NM60ND is 0.19 ohms.
What are the typical applications of STI23NM60ND?
- STI23NM60ND is commonly used in applications such as AC-DC and DC-DC converters, motor drives, and electronic lamp ballasts.
What is the maximum continuous drain current of STI23NM60ND?
- The maximum continuous drain current of STI23NM60ND is 23A.
What are the thermal characteristics of STI23NM60ND?
- STI23NM60ND has a low thermal resistance and is designed to efficiently dissipate heat in high-power applications.
Is STI23NM60ND suitable for high-frequency switching applications?
- Yes, STI23NM60ND is suitable for high-frequency switching due to its fast switching speed and low gate charge.
Does STI23NM60ND have built-in protection features?
- STI23NM60ND offers built-in protection against overcurrent, overvoltage, and thermal overload, making it reliable in demanding environments.
What are the recommended operating conditions for STI23NM60ND?
- STI23NM60ND operates within a specified temperature range and voltage limits, making it important to adhere to these conditions for optimal performance.
Where can I find detailed technical specifications and application notes for STI23NM60ND?
- Detailed technical specifications and application notes for STI23NM60ND can be found in the product datasheet provided by the manufacturer.