STW35N60DM2 belongs to the category of power MOSFETs.
The STW35N60DM2 has the following key specifications: - Drain-Source Voltage (VDSS): 600V - Continuous Drain Current (ID): 35A - On-State Resistance (RDS(on)): 0.09Ω - Gate-Source Threshold Voltage (VGS(th)): 3V - Total Gate Charge (QG): 65nC
The pin configuration of the STW35N60DM2 is as follows: 1. Source (S) 2. Gate (G) 3. Drain (D)
Advantages: - High efficiency in power conversion - Fast switching speed - Effective heat dissipation
Disadvantages: - Sensitive to voltage spikes and transients - Requires careful handling to prevent static damage
The STW35N60DM2 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET regulates the power flow in the circuit.
The STW35N60DM2 finds extensive use in the following application fields: - Power Supplies: Used in switch-mode power supplies for efficient voltage regulation. - Motor Control: Employed in motor drive circuits for precise speed and torque control. - Lighting: Utilized in LED driver circuits for efficient and reliable illumination.
Some alternative models to the STW35N60DM2 include: - IRFP460: A similar power MOSFET with comparable voltage and current ratings. - FDP8878: Offers similar performance characteristics suitable for power electronics applications.
In conclusion, the STW35N60DM2 power MOSFET serves as a crucial component in various electronic systems, offering high efficiency, fast switching, and reliable power management capabilities.
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What is the maximum voltage rating of STW35N60DM2?
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Can STW35N60DM2 be used in high-power applications?
What type of package does STW35N60DM2 come in?
Is STW35N60DM2 suitable for switching power supplies?
Does STW35N60DM2 require a heat sink for proper operation?
What are the typical applications for STW35N60DM2?
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Is STW35N60DM2 RoHS compliant?