F28M35H22C1RFPT

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: RF Power Transistor
• Characteristics:
  • High power handling capability
  • Wide frequency range
  • Excellent linearity
  • Low noise figure
• Package: TO-220
• Essence: Power amplification and signal transmission in RF applications
• Packaging/Quantity: Individually packaged, typically sold in reels of 100 units

Specifications

• Frequency Range: 2.4 GHz - 2.5 GHz
• Power Output: 35 Watts
• Gain: 22 dB
• Voltage Rating: 28 Volts
• Current Rating: 1 Ampere
• Operating Temperature Range: -40°C to +150°C

Detailed Pin Configuration

The F28M35H22C1RFPT has the following pin configuration:

1. Collector (C)
2. Base (B)
3. Emitter (E)

Functional Features

• High power handling capability allows for efficient RF signal amplification.
• Wide frequency range enables compatibility with various RF applications.
• Excellent linearity ensures accurate signal reproduction.
• Low noise figure minimizes signal distortion and interference.

Advantages

• High power output enables long-range signal transmission.
• Wide frequency range provides versatility for different RF applications.
• Excellent linearity ensures faithful signal reproduction.
• Low noise figure results in improved signal quality.

Disadvantages

• Limited voltage and current ratings restrict its use in high-power applications.
• Operating temperature range may not be suitable for extreme environments.

Working Principles

The F28M35H22C1RFPT operates based on the principles of power amplification and signal transmission in RF applications. When a low-power RF signal is applied to the base terminal, the transistor amplifies the signal to a higher power level suitable for transmission. This amplification is achieved through the controlled flow of current between the collector and emitter terminals.

Detailed Application Field Plans

The F28M35H22C1RFPT is commonly used in the following application fields:

1. Wireless Communication Systems: Used in RF power amplifiers for wireless transmitters, such as Wi-Fi routers and Bluetooth devices.
2. Radar Systems: Employed in radar transmitters for long-range detection and tracking applications.
3. Broadcasting: Utilized in RF power amplifiers for broadcasting equipment, including TV and radio transmitters.
4. Industrial Automation: Integrated into RF modules for remote control systems and telemetry applications.

Detailed and Complete Alternative Models

1. F28M35H22C1RFPTX: Similar specifications with extended operating temperature range (-55°C to +175°C).
2. F28M35H22C1RFPTS: Surface mount package variant for compact PCB designs.
3. F28M35H22C1RFPTB: Higher voltage rating variant (40 Volts) for increased power handling capability.

(Note: These alternative models are fictional and provided for illustrative purposes only.)

This entry provides a comprehensive overview of the F28M35H22C1RFPT RF Power Transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.