VS-113CNQ100ASLPBF

Product Category: Power Semiconductor

Basic Information Overview: - Category: Schottky Diode - Use: Rectification and power conversion in electronic circuits - Characteristics: Low forward voltage drop, high switching speed, low reverse leakage current - Package: TO-263AB (D2PAK) - Essence: Silicon Carbide Schottky Diode - Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications: - Voltage Rating: 100V - Current Rating: 113A - Forward Voltage Drop: 1.35V @ 25°C - Reverse Leakage Current: 50µA @ 25°C - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Anode - Pin 2: Cathode - Pin 3: Cathode

Functional Features: - High efficiency due to low forward voltage drop - Fast switching speed for improved circuit performance - Low reverse leakage current for reduced power loss

Advantages: - Enhanced power conversion efficiency - Reduced heat dissipation - Compact package size

Disadvantages: - Higher cost compared to traditional silicon diodes - Sensitive to overvoltage conditions

Working Principles: The VS-113CNQ100ASLPBF operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes.

Detailed Application Field Plans: - Power supplies - Solar inverters - Motor drives - Uninterruptible power supplies (UPS) - Electric vehicle charging systems

Detailed and Complete Alternative Models: - STPSC10H065DLF - C3D10060A - SCT2H12NZGC11

This comprehensive entry provides a detailed overview of the VS-113CNQ100ASLPBF, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.