Diode/Bridge Rectifier

DC reverse withstand voltage (Vr) 100 Average rectified current (Io) 3 Reverse current (Ir) 0.5

DC reverse withstand voltage (Vr) 100 Average rectified current (Io) 3 Reverse current (Ir) 0.5

High-end brands, 1000V, 1A, VF=1.1V@1A, 1N4007 SMA patch encapsulation

Diode configuration: Independent DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 2A Forward voltage drop (Vf): 1.3V@2A Reverse current (Ir): 5uA@1kV Reverse recovery time ( trr): 500ns Operating temperature: -65℃~+150℃@(Tj)

1000V, 3A, VF=1.15V@3A

400V, 1A, VF=1.1V@1A

2A 20V 2Pin

VR reverse withstand voltage/200V: IR reverse current/10u: VF forward current/1V: IO average current/3A: Trr recovery time/50ns

Reverse working voltage max.40(V)/VRMSmax.28(V)/VRmax.40(V)@3A, T = 25°C VF0.50 (V)

Schottky diodes are optimized for very low forward voltage drop and low leakage current and are used in a variety of DC-DC converter, clamping and protection applications in portable devices. The NSR0240H features a SOD-323 miniature encapsulation that helps designers accomplish a challenging task of increasing efficiency and meeting shrinking space requirements.