Diode/Bridge Rectifier

IF(A) 5 VR(V) 100 VF(V) 0.85 IR(uA) 1000 IFSM(A) 150

IF(A) 5 VR(V) 100 VF(V) 0.85 IR(uA) 1000 IFSM(A) 150

GBP408-B1-0000HF

Diode configuration: 1 pair in series Power: 330mW DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 700mV@1mA Reverse current (Ir): 300nA@50V Recovery time (trr): 15ns Operating temperature: +150℃@(Tj)

D3UB80A-B1-0000

1000V, 2A, VF=1V@1A

DC reverse withstand voltage (Vr) Silicon carbide100 Average rectified current (Io) 20 Reverse current (Ir) 0.1

DC reverse withstand voltage (Vr) Silicon carbide100 Average rectified current (Io) 20 Reverse current (Ir) 0.1

3A