Diode/Bridge Rectifier

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The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It has an epitaxial structure with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

Switching diode Diode configuration: 1 pair in series Power: 225mW DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.1V@100mA Reverse recovery time (trr): 4ns 100V, 200mA, trr=4ns, VF=1.1V@100mA, PD=225mW

80V 100MA, trr=4ns, VF=1.2V@100mA