Diode/Bridge Rectifier
Número de pieza
onsemi (Ansemi)
Fabricantes
The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.
Descripción
88609 PCS
En stock
Número de pieza
UMW (Friends Taiwan Semiconductor)
Fabricantes
Descripción
78681 PCS
En stock
Número de pieza
MSKSEMI (Mesenco)
Fabricantes
DC reverse withstand voltage (Vr): 45V Average rectified current (Io): 15A Forward voltage drop (Vf): 470mV@15A
Descripción
69931 PCS
En stock
Número de pieza
YANGJIE (Yang Jie)
Fabricantes
SD101AW-F2-0000HF
Descripción
69644 PCS
En stock
Número de pieza
Crystal Conductor Microelectronics
Fabricantes
Descripción
54258 PCS
En stock
Número de pieza
Crystal Conductor Microelectronics
Fabricantes
Descripción
83757 PCS
En stock
Número de pieza
inventchip (Zhenxin Electronics)
Fabricantes
Silicon carbideSBD1200V40A
Descripción
55106 PCS
En stock
Número de pieza
inventchip (Zhenxin Electronics)
Fabricantes
Silicon carbideSBD1200V40A
Descripción
93322 PCS
En stock
Número de pieza
FUXINSEMI (Fuxin Senmei)
Fabricantes
DC reverse withstand voltage (Vr) Silicon carbide100 Average rectified current (Io) 3 Reverse current (Ir) 0.5
Descripción
79308 PCS
En stock