Diode/Bridge Rectifier

Diode configuration: 1 pair in series DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V@100mA Reverse current (Ir): 2uA@25V

BAS16X-F2-0000HF

200V, 1A, VF=1.1V@1A

50V, 5A

Schottky diode Silicon carbide diode configuration: stand-alone DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V

Schottky diode Silicon carbide diode configuration: stand-alone DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V

The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It employs an epitaxial structure with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.