Diode/Bridge Rectifier

VR reverse withstand voltage/45V: IR reverse current/300u: VF forward current/0.42V: IO average current/10A: Trr recovery time/20ns

60V 30A

I(AV) Silicon carbide 30.0 VRRM(V) 60 IFsM(A) 250 VFM(V) 0.56 VFMI(AV)(A) 30 IRM@VRRM(μA) Silicon carbide12

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V@1A Reverse recovery time (trr): 150ns

Fast Recovery/Ultra Fast Recovery Diode Diode Configuration: Standalone DC Reverse Withstand Voltage (Vr): 400V Average Rectified Current (Io): 5A Forward Voltage Drop (Vf): 1.25V@5A Reverse Recovery Time (trr): 35ns

400V, 1A, VF=1.1V@1A, rectifier diode