Diode/Bridge Rectifier

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

1000V, 1A, VF=1.1V@1A

50V, 1A, VF=1.1V@1A

1000V, 3A, VF=1.2V@3A

I(AV) 5 VRRM(V) 100 IFsM(A) 130 VFM(V) 0.65 VFMI(AV)(A) 5 IRM@VRRM(μA) 200

VR=200V IO=2A VF=0.95V

DC reverse withstand voltage (Vr) 40 Average rectified current (Io) Silicon carbide3.0 Reverse current (Ir) 0.5

DC reverse withstand voltage (Vr) 40 Average rectified current (Io) Silicon carbide3.0 Reverse current (Ir) 0.5

100V, 2x10A, VF=0.85V@10A

Maximum forward average rectified current (A) 1 Maximum reverse peak voltage (V) 40 Forward peak surge current (A) 30 Maximum forward voltage (V) 0.55 Maximum reverse current (uA) 200

Maximum forward average rectified current (A) 3 Maximum reverse peak voltage (V) 40 Forward peak surge current (A) 80 Maximum forward voltage (V) 0.55 Maximum reverse current (uA) 200

Maximum forward average rectified current (A) 1 Maximum reverse peak voltage (V) 40 Forward peak surge current (A) 30 Maximum forward voltage (V) 0.55 Maximum reverse current (uA) 200

Maximum forward average rectified current (A) 3 Maximum reverse peak voltage (V) 40 Forward peak surge current (A) 80 Maximum forward voltage (V) 0.55 Maximum reverse current (uA) 200