Diode/Bridge Rectifier

This Schottky diode barrier diode is suitable for low leakage current applications. It features x3DFN2 ultra-small encapsulation, which helps designers complete the challenging task of improving energy efficiency and meeting shrinking space requirements.

Diode configuration: 1 pair of common cathode DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 30A Forward voltage drop (Vf): 800mV@30A Reverse current (Ir): 100uA@60V

Diode configuration: 1 pair of common cathode DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 30A Forward voltage drop (Vf): 800mV@30A Reverse current (Ir): 100uA@60V

IF(A) 2 VRRM(V) 1000 IFSM(A) 50 VFM@IF(V) 1.3 IRM@VRRM(uA) 5 trr(ns) 500

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

SOT227 module