Diode/Bridge Rectifier

BAS40T-F2-0000HF

Silicon carbide SBD1200V10A

Silicon carbide SBD1200V10A

VR=40V IF=0.35A VF=0.6V@200mA

SiC Silicon carbide Schottky diode tube, 8A, 650V, forward voltage drop only 1.3V (typ), maximum junction temperature 175 degrees.

DC reverse withstand voltage (Vr): 800V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.7V@1A Reverse current (Ir): 10uA@800V Reverse recovery time (trr): 75ns

SKBPC3508-A1-0000

700V, 8A