Diode/Bridge Rectifier

30V,0.2A,VF=0.5V@200mA

POWERMITEPower encapsulation The Schottky diode uses the Schottky diode barrier principle, using barrier metal and epitaxial structure, which can produce an optimized forward voltage drop-reverse current trade-off. This advanced encapsulation technology can be used to achieve energy-efficient miniature, space-saving devices. Due to its unique thermal design, Powermite has the same thermal performance as SMA, but with a 50% smaller footprint and a height profile of < 1.1 mm, one of the smallest in the industry. Due to its small size, it is suitable for portable and battery-operated products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size performance are critical.

VR reverse withstand voltage/200V: IR reverse current/20u: VF forward current/0.95V: IO average current/3A: Trr recovery time/20ns

GBJ5008-B1-0000

DC reverse withstand voltage (Vr): 1KV Average rectified current (Io): 2A Forward voltage drop (Vf): 1.3V Reverse current (Ir): 5uA@1kV Reverse recovery time (trr): 500ns

switching, 250V 200mA 1.25V 50ns, SOD-323